Abstract:An open challenge for developing solar-driven Ta 3 N 5 -based photoanodes with the ability to induce low-bias photoelectrochemical (PEC) water splitting is that their deep-level defects originated from low-valent tantalum cations (Ta 3+ ) and nitrogen vacancies (V N ) seriously reduce the photovoltage and thus increase the bias for water splitting. Herein, we developed an effective topotactic transition synthesis route of producing few deep-level defects porous Ta 3 N 5 film from the precursor film of ammonium tantalum oxyfluoride compound ((NH 4 ) 2 Ta 2 O 3 F 6 ) pyramids on the Ta foil. The highly electronegative fluoride ions in (NH 4 ) 2 Ta 2 O 3 F 6 could weaken the Ta–O bonds and the accompanied porous structure facilitates reactant diffusion, which favors the complete nitridation. Consequently, the resulting porous Ta 3 N 5 film has very few deep-level defects, enabling an ultralow photocurrent onset potential at 0.2 V ( vs . RHE) and a short-circuit photocurrent density ( J sc ) of 3.28 mA cm −2 after decorating oxygen evolution reaction (OER) cocatalysts under AM 1.5 G irradiation. Moreover, the J sc can retain 85% of the initial value for a 5 h continuous stability test. By reducing the particle size of (NH 4 ) 2 Ta 2 O 3 F 6 pyramid precursor, the deep-level defects could be further lowered in the Ta 3 N 5 film, achieving the photoactivity for water oxidation at 0 V ( vs . RHE) after modifying the OER co-catalyst. Graphical (NH 4 ) 2 Ta 2 O 3 F 6 pyramid array films were rationally prepared for the synthesis of less defective Ta 3 N 5 films via the thermal nitridation induced topological transition for ultralow-bias photoelectrochemical water splitting. Download : Download high-res image (109KB) Download : Download full-size image

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