Abstract:By applying low‐voltage pulses on antiferromagnetic La0.35Sr0.65MnO3 layer via polyvinylidene fluoride with trifluoroethylene gate dielectric, oxygen vacancies are introduced into the antiferromagnetic layer, thus modulating the structure and magnetism of the antiferromagnetic layer. This study provides an alternative pathway from conventional strain effect or electrostatic doping effect in ferroelectric field effect transistor to regulate the magnetism of antiferromagnet. Electric‐field regulation of magnetic properties in perovskite manganites has attracted much attention for its potential in spintronics. For antiferromagnetic perovskite manganites, fewer studies are reported due to technological difficulties in probing their magnetic properties. Here, negative exchange bias (EB) is realized in epitaxial antiferromagnetic/ferromagnetic manganite bilayers with atomically flat interfaces. The low‐voltage pulse modulation of EB is demonstrated using the field‐effect device geometry with the ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene as a dielectric gating layer, antiferromagnetic La0.35Sr0.65MnO3 (AF‐LSMO) as pinning layer, and ferromagnetic La0.7Sr0.3MnO3 (FM‐LSMO) as conduction channel. Instead of using non‐volatile polarizations to control the EB, volatile polarizations in ferroelectric field effect transistors are suggested to be capable of modulating the EB. With high‐resolution electron microscopy and spectroscopy, the non‐volatile regulation of EB is attributed to the creation/annihilation of oxygen vacancies in the AF‐LSMO layer via low‐voltage pulses. This study reveals the effect of volatile electric polarizations in ferroelectric field effect devices and highlights the potential for low‐voltage pulse control of the physical properties in antiferromagnetic perovskite oxide insulators.

Exchange Bias Effect in Epitaxial LaMnO3+δ Film Induced by Electron Beam Irradiation

Electron Beam Irradiation: Exchange Bias Effect in Epitaxial LaMnO <sub>3+δ</sub> Film Induced by Electron Beam Irradiation (Adv. Mater. Interfaces 2/2020)

Exchange Bias in A Single Lamno3 Film Induced by Vertical Electronic Phase Separation

Exchange Bias in (110)-Orientated Bi0.9la0.1feo3/La0.5ca0.5mno3 Films

Ionic liquid modulation of exchange bias in epitaxial LaMnO3 thin films

Exchange Bias Effect and Magnetic Properties in ${\Hbox{la}}_{0.7}{\hbox{sr}}_{0.3}{\hbox{mno}}_{3}\hbox{-}{\Hbox{nio}}$ Nanocomposite Films

Exchange Bias Effect in Phase Separated La0.33Pr0.34Ca0.33MnO3 Thin Films

Exchange Bias Effect in LaFeO3: La0.7Ca0.3MnO3 Composite Thin Films

Exchange bias in (1 1 0)-orientated Bi 0.9La 0.1FeO 3/La 0.5Ca 0.5MnO 3 films

Strong Perpendicular Exchange Bias in Epitaxial La0.7Sr0.3MnO3:LaFeO3 Nanocomposite Thin Films

Strain engineering induced interfacial self-assembly and intrinsic exchange bias in a manganite perovskite film

Controllable Ground Magnetic States and Exchange Bias in LaMnO<sub>3</sub> Thin Films by the Design of Stoichiometry Offset

Exchange bias effect induced by the intrinsic inhomogeneity in La 1-xCaxMnO3 (0.55≤x≤0.95) compounds

Strain-tunable Unconventional Exchange-Bias Effect in Epitaxial CaIrO3/LaMnO3 Heterostructures

Exchange Coupling-Induced Uniaxial Anisotropy in La 0.7 Sr 0.3 MnO 3 Thin Films

Exchange Bias Effect of Epitaxial Noncollinear Antiferromagnetic Mn3Sn Films

Interfacial Ferromagnetic Coupling and Positive Spontaneous Exchange Bias in SrFeO3- x/La0.7Sr0.3MnO3 Bilayers

Robust Interfacial Exchange Bias and Metal Insulator Transition Influenced by the Lanio3 Layer Thickness in La0.7sr0.3mno3/Lanio3 Superlattices

Exchange bias effect of epitaxial noncollinear antiferromagnetic Mn 3 Sn films

Modulation of Exchange Bias in La0.35Sr0.65MnO3/La0.7Sr0.3MnO3 through Volatile Polarization of P(VDF‐TrFE) Gate Dielectric

Exchange Bias in Multiferroic BiFeO3 and YMnO3 Multilayers: One More Parameter for Magnetoelectric Manipulation