Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Role of Argon in Optimization of the Cu Surface to Synthesize Uniform Monolayer Graphene by Chemical Vapor Deposition

Large-Area Synthesis of High-Quality and Uniform Monolayer Graphene Without Unexpected Bilayer Regions

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Preparation of Ultra-Smooth Cu Surface for High-Quality Graphene Synthesis

Etching Effect of Hydrogen and Oxygen on the Chemical Vapor Deposition Graphene on Cu

Monolayer Graphene Growth Using Additional Etching Process in Atmospheric Pressure Chemical Vapor Deposition

Elucidation of heterogeneous graphene nucleation and growth through Cu surface engineering

Graphene Synthesis on Cu by Chemical Vapor Deposition

Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth

Criteria for the Growth of Large-Area Adlayer-Free Monolayer Graphene Films by Chemical Vapor Deposition

Effects of Surface Oxidation of Cu Substrates on the Growth Kinetics of Graphene by Chemical Vapor Deposition.

Threefold atmospheric-pressure annealing for suppressing graphene nucleation on copper in chemical vapor deposition

Deposition and Growth Mechanism of Graphene on Copper Crystal Surface Based on Molecular Dynamics Simulation

Layer Dependence of Graphene for Oxidation Resistance of Cu Surface

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

The role of Cu crystallographic orientations towards growing superclean graphene on meter-sized scale

A Simple Method to Tune Graphene Growth Between Monolayer and Bilayer

Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assembly.