Abstract:Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect, the axion insulator state, and high-Chern-number and high-temperature Chern insulator (CI) states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by similar to 40-60 degrees, the Hall resistance deviates from the quantization value, and a colossal, anisotropic magnetoresistance is detected. Theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from the ferromagnetic state to the canted antiferromagnetic state induces a topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. These findings reveal a kind of topological phase transition associated with magnetism and spin-orbit coupling. In this letter, we suggest that MnBi2Te4 is an ideal platform for exploring topological quantum phase transitions, and it provides an efficient means for modulating topological quantum states and topological quantum phase transitions.

Surface-induced Linear Magnetoresistance in the Antiferromagnetic Topological Insulator MnBi2Te4

Topological Driven Linear Magnetoresistance in Sb-doped MnBi2Te4

From Negative to Positive Magnetoresistance in the Intrinsic Magnetic Topological Insulator MnBi2Te4

Strongly Gapped Topological Surface States on Protected Surfaces of Antiferromagnetic MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$

Linear Magnetoresistance on the Topological Surface

Proximity-induced Superconducting Gap in the Intrinsic Magnetic Topological Insulator MnBi2Te4

Distinguishing Surface and Bulk Electromagnetism via Their Dynamics in an Intrinsic Magnetic Topological Insulator

Nonreciprocal Transport in a Bilayer of MnBi2Te4 and Pt

Nonreciprocal Transport in a Bilayer of MnBi 2 Te 4 and Pt

Heavy Surface State In A Possible Topological Kondo Insulator: Magnetothermoelectric Transport On The (011) Plane Of Smb6

Detection of Magnetic Gap in Topological Surface States of MnBi2Te4

Defect-driven Ferrimagnetism and Hidden Magnetization in MnBi2Te4

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

High-Field Linear Magneto-Resistance In Topological Insulator Bi2se3 Thin Films

Metamagnetism of few layer topological antiferromagnets

Realizing Gapped Surface States in the Magnetic Topological Insulator MnBi2−xSbxTe4

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Linear Positive and Negative Magnetoresistance in Topological Insulator Bi2Se3 Flakes

Analytical Solution for the Surface States of the Antiferromagnetic Topological Insulator MnBi2Te4

Analytical solution for the surface states of the antiferromagnetic topological insulator MnBi 2 Te 4

Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films