A Numerical Method to Determine the Equivalent Thermal Conductivity of Sintered Silver

Yuankun Hu,Fei Qin,Yanwei Dai,Pei Chen

DOI: https://doi.org/10.1109/icept50128.2020.9202728

2020-01-01

Abstract:Nano-silver paste is widely used in silicon carbide (SiC) power devices, where SiC power devices possess the characteristics of high junction temperature and high-power density, which could lead to generation of heat dissipation issues during work. As the most critical part of the heat transfer of the entire device, the solder layer may have a significant effect on the heat dissipation performance and lifetime of the entire device during the service, due to its porous structure when the sintering process is completed. Therefore, must be pay attention to the thermal behavior of sintered nano-silver. In this paper, a two-dimensional random generation method for the establishment of sintered silver layer is proposed. The heat transfer performance of sintered silver is expressed by the equivalent thermal conductivity, which is calculated by a numerical method, and the effect of sintered silver microstructure on thermal conductivity is also analyzed. The simulation results show that the equivalent thermal conductivity reduces gradually when the porosity of microstructure increases. The heat transfer performance of sintered silver layer can be estimate by this method under various conditions.