Preparation and Performance of a SILAR TiO2/CdS/Co-Pi Water Oxidation Photoanode

Zhou Li,Liu Huan-Huan,Yang Yu-Lin,Qiang Liang-Sheng
DOI: https://doi.org/10.3866/PKU.WHXB201608232
2016-01-01
Acta Physico-Chimica Sinica
Abstract:A semiconductor heterostructure of TiO2/CdS/cobalt phosphate water oxidation catalyst (Co-Pi WOC) photoanode was fabricated by the successive ionic layer adsorption and reaction (SILAR) procedure and photo assisted electro-deposition. The structure, morphologys and magnetic properties of the resultant particles were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS). CdS and Co-Pi quantum dots loaded on to the TiO2 nanofilm. The TiO2/CdS/Co-Pi photoanode had an initial photocurrent of 1.3 mA . cm(-2) and a stable level of 0.5 mA . cm(-2). A relatively stable level was maintained under visible light irradiation in neutral solution, especially at the low bias voltage of 0 V (vs Ag/AgCI). In this system, CdS quantum dots serve as the light absorber and generate electron holes; the Co-Pi WOC acts as a hole transfer layer that can transfer the hole for water oxidation; and the TiO2 is the electron conductor for efficient charge transfer to the cathode to actualize proton reduction.
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