In Situ ESR Study of Hydroxyl Radical Generation on a Boron Doped Diamond Film Electrode Surface

Geng Rong,Zhao Guo-Hua,Liu Mei-Chuan,Lei Yan-Zhu

DOI: https://doi.org/10.3866/pku.whxb20100602

2010-01-01

Abstract:An in situ electrochemistry. electron spin resonance (ESR) method was established to study the generation reaction and the variation regularity of hydroxyl radicals (center dot OH) on a boron doped diamond (BDD) film electrode in aqueous solution. Results indicate that, above the oxygen evolution potential of BDD filmelectrode (2.4 V in 0.5 mol center dot L-1 H2SO4 solution), the generation rate of center dot OH increases as the applied potential or current density increases. However, there was no center dot OH ESR response when the applied potential was below 2.4 V center dot Compared to H center dot terminated surface, the O center dot terminated surface has a higher center dot OH generation efficiency because it is hydrophilic and this favors the water splitting reaction. The degradation processes for organic pollutants are always operated under high potential or current density, which allow the BDD film electrode surface to maintain its O center dot terminated condition. These conditions favor the center dot OH generation reaction and the reaction takes place with high activity. The pH value of the solution also influenced the center dot OH generation reaction. BDD filmelectrode has a stronger center dot OH generation ability in an acidic medium than in a neutral or alkaline medium. We also found that O-3(-) OH can be produced on the surface of BDD film electrode.This article provides new insights into the mechanism of OH generation on the surface of BDD film electrode and evidence of a highly efficient electrochemical oxidation process during the treatment of organic pollutants.