Abstract:The contact geometry and electronic transport properties of a silicon carbide (SiC) molecule coupled with Au (1 0 0) electrodes are investigated by performing density functional theory plus the non-equilibrium Green's function method. We perform simulations of the Au–SiC–Au junction breaking process by calculating the conductance in four different anchoring geometries and obtain the equilibrium conductance and the projected density of states of junctions in the optimal position. The hollow–hollow configuration is found to be the most stable contact geometry with the largest conductance. From the calculation of restoring force and the spatial electron density differences after the structural break, we conclude that the Si–C bond is more stable than Au–C and Au–Si bonds in the single-molecular molecular junction. Moreover, the behavior of the junction currents is revealed under small bias. All junctions exhibit a linear current–voltage relationship, indicating characteristic metallic behavior at low bias voltage. The asymmetry of the I–V curves reflects the asymmetry of the molecule and the contact geometry. The origin of the transport spectrum of the junctions is discussed with the molecular projected self-consistent Hamiltonian (MPSH) states. The calculated results prove that the coupling morphology of the SiC molecule connected with electrodes, the distance and the external bias voltage have a great effect on the conductance of nanoscale junctions.

Theoretical Calculation of Electron Transport Properties of the Au-Si-60-Au Molecular Junctions

First-Principles Calculations of the Electronic Transport in Au-Si-Au Junctions

First Principles Calculation on Quantum Transport of Au-Si 3 -Au Nanoscale Junction

Calculation of Electron Transport in Gaas Nanoscale Junctions Using First-Principles

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Calculation of the properties of electron transport through linear silicon atomic chain

Quantum Transport of Au-S-S-Au Nanoscale Junctions

Electronic Transport Across S-9 Sulfur Clusters

First-principles Calculation of the Conductance of the Al-C60-Al Junction

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

First-Principles Calculation Of The Transport Properties Of Molecular Wires Between Au Clusters Under Equilibrium

Electron Transport Properties and Spin Modulation Effect Analysis for C60, Au@C60 and Ag@C60

Transport Properties Of The Au-32 Cluster With Fullerene Symmetry

Transport properties of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi mathvariant="normal">Au</mml:mi><mml:mn>32</mml:mn></mml:msub></mml:math>cluster with fullerene symmetry

Effects of metal–molecule interface conformations on the electron transport of single molecule

Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate

Electronic Transport Properties Through Gold–Dithiol-Molecule–Gold Junctions in Equilibrium

Ab initio quantum transport study of metal-molecule-metal structures

First-principles calculation on the zero-bias conductance of a gold/1,4-diaminobenzene/gold molecular junction

Quantitative Interpretation of the Low-Bias Conductance of Au-Mesitylene-Au Molecular Junctions Formed from Mesitylene Monolayers.

A Method To Study Electronic Transport Properties Of Molecular Junction: One-Dimension Transmission Combined With Three-Dimension Correction Approximation (Otctca)