Abstract:Background: Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that allows for remote monitoring. This technology offers the possibility of using AlGaN/GaN HEMTs for extended investigations of airway pathology of detecting glucose in EBC without the need for clinical visits. Methods: HEMT structures, consisting of a 3-microm-thick undoped GaN buffer, 30-A-thick Al(0.3)Ga(0.7)N spacer, and 220-A-thick silicon-doped Al(0.3)Ga(0.7)N cap layer, were used for fabricating the HEMT sensors. The gate area of the pH, chloride ion, and glucose detection was immobilized with scandium oxide (Sc(2)O(3)), silver chloride (AgCl) thin film, and zinc oxide (ZnO) nanorods, respectively. Results: The Sc(2)O(3)-gated sensor could detect the pH of solutions ranging from 3 to 10 with a resolution of approximately 0.1 pH. A chloride ion detection limit of 10(-8) M was achieved with a HEMT sensor immobilized with the AgCl thin film. The drain-source current of the ZnO nanorod-gated AlGaN/GaN HEMT sensor immobilized with glucose oxidase showed a rapid response of less than 5 seconds when the sensor was exposed to the target glucose in a buffer with a pH value of 7.4. The sensor could detect a wide range of concentrations from 0.5 nM to 125 microM. Conclusion: There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensing different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to measure the glucose concentration for diabetic applications.

Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors

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Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

Investigation of High-Sensitivity Ph Sensor Based on Au-Gated AlGaN/GaN Heterostructure

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe3+ Detection

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

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ENZYME-BASED LACTIC ACID DETECTION USING ALGAAS/GAAS HIGH ELECTRON MOBILITY TRANSISTOR WITH SB-DOPED ZNO NANOWIRES GROWN ON THE GATE REGION

A Theoretical Approach to Study the Frequency Dependent Dielectric behavior of Breast Cancer Cells using AlN buffer-based AlGaN/GaN HEMT

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Ph Sensor Based on an AlGaN/GaN HEMT Structure

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Specific Detection of Biomolecules in Physiological Solutions Using Graphene Transistor Biosensors

Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN Ph Sensor