Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors

Li Jia-Dong,Cheng Jun-Jie,Miao Bin,Wei Xiao-Wei,Zhang Zhi-Qiang,Li Hai-Wen,Wu Dong-Min
DOI: https://doi.org/10.7498/aps.63.070204
IF: 0.906
2014-01-01
Acta Physica Sinica
Abstract:In order to enhance the performance of AlGaN/GaN high electron mobility transistor (HEMT) biosensor, millimeter grade AlGaN/GaN HEMT structure have been designed and successfully fabricated. Factors influencing the capability of the AlGaN/GaN HEMT biosensor are analyzed. UV/ozone is used to oxidize GaN surface and then 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer can be bound to the sensing region. This serves as a binding layer in the attachment of prostate specific antibody (anti-PSA) for prostate specific antigen detection. The millimeter grade biomolecule-gated GaN/AlGaN HEMT sensor shows a quick response when the target prostate specific antigen in a buffer solution is added to the antibody-immobilized sensing area. The detection capability of this biomolecule-gate sensor estimated to be below 0.1pg/ml level using a 2 x 1 : 5 mm 2 sensing area, which is the best result of GaN/AlGaN HEMT biosensor for PSA detection till now. The electrical result of the biomolecule-gated GaN/AlGaN HEMT biosensor suggests that this biosensor might be a useful tool for the prostate cancer screening.
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