Abstract:In the design of electronic devices based on two-dimensional heterojunctions, the contact between electrodes and different surfaces of two-dimensional heterojunctions may produce different effects. Furthermore, metal-semiconductor contact plays an important role in modern devices. However, due to the Fermi level pinning effect (FLPE), it is difficult to tune the Schottky barrier height between common metals (e.g. Au, Ag, and Cu) and semiconductors. Fortunately, the FLPE becomes weak at the contact between the 2D metal and 2D semiconductor, due to the suppression of metal-induced gap states. Here, we choose monolayer NbS2 as the electrode to be in contact with the MoSe2/WSe2 bilayer. The interfacial properties as well as the stacking dependence are discussed based on the density functional theory, combined with the nonequilibrium Green's functions. Two configurations are considered, i.e. the WSe2/MoSe2/NbS2 and MoSe2/WSe2/NbS2 stacking sequences. Our results show that barrier free contact can be formed in these 2D metal-semiconductor junctions (MSJs). In addition, the transport properties of the proposed devices are sensitive to the stacking sequence. The drain-source current versus bias voltage (I-V) curve exhibits a linear relationship for the WSe2/MoSe2/NbS2 system and its resistance is much lower than the MoSe2/WSe2/NbS2 MSJ. Detailed analysis reveals that the transport properties are governed by the electronic coupling between specific interlayer states. In WSe2/MoSe2/NbS2 configuration, large overlapping states are observed, which facilitate charge transfer and result in good ohmic contact. Our work may provide a theoretical guidance for the designing of next-generation ultrathin and flexible devices.

2D/2D Electrical Contacts in the Monolayer WSe2 Transistors: A First-Principles Study

Ohmic Contacts Between Monolayer WSe2 and Two-Dimensional Titanium Carbides

Ohmic MXene Contacts for Symmetric P- and N-Type Monolayer WSe2 Schottky Barrier Field-Effect Transistors

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Electrical Contacts in Monolayer MoSi2N4 Transistors

Low Resistance Contact to P-Type Monolayer WSe2

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe 2 as high performance contacts for WSe 2 transistors

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Contact Engineering for Two-Dimensional Semiconductors

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

The Contacts of the Monolayer Semiconductor C2N with 2D Metal Electrodes

Controlling phase transition in WSe2 towards ideal n-type transistor

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

Epitaxial van der Waals contacts for low schottky barrier MoS 2 field effect transistors

Interfacial Properties of Monolayer MoSe2–Metal Contacts

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts