Abstract:Photoelectrochemical (PEC) water splitting is a promising strategy for solar energy conversion and storage. However, poor charge transfer and sluggish water oxidation reaction restrain the PEC performance. Herein, we propose a simple and effective interface etching strategy on the semiconductor surface to modulate the photoanode/cocatalyst interface, following by the decoration of NiFeBi oxygen evolution catalyst (OEC) for significantly improved oxygen evolution activity and stability of the BiVO 4 photoanode. The resultant photoanode achieves a record photocurrent density of 6.33 mA cm −2 at 1.23 V RHE under one sun illumination, over approximately 3.63 times higher than that of the pristine BiVO 4 . The applied bias photon-to-current efficiency of 2.3% can be attained with showing a good durability of 40 h. Systematic studies have demonstrated that the introduction of electron-deficient state of B accelerates the surface trapping hole and the charge transfer, which enhances the interfacial coupling between BiVO 4 and NiFeBi OEC, and strongly drives the hole from the BiVO 4 to the NiFeBi surface for capable water oxidation. Density functional theory calculations prove that the surface B treatment increases the effective number of reaction paths of OER and the density of electronic states near the Fermi energy level, which improves the electrical conductivity of the BiVO 4 /OEC interface. This work provides a feasible strategy for tailoring the interface engineering to significantly enhance the PEC activity and stability of the photoanodes.

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