Abstract:The morphology of the end facet has a great effect on the performance of the one-dimensional semiconductor nanostructure. In terms of the lattice structure, the end facet of synthesized CdS nanostructures is usually hexagonal-shaped. Therefore, morphological tunability of the end facet for CdS is still a challenge. In this work, quasi-rectangular cross-sectional Sn-doped CdS nanowires were successfully synthesized by the chemical vapor deposition method. The crystal and morphological properties of synthesized nanowires were characterized by transmission electron microscopy and scanning electron microscopy. Because of the high crystal quality and well-cleaved surface, optically pumped whispering gallery mode lasing is realized at room temperature with a threshold of 11.3 mW/cm(2). Compared to the hexagonal-shaped Sn-doped CdS nanowires, the tunability of the output mode is achieved. Temperature-dependent photoluminescence spectra were measured, and the temperature coefficient is determined to be -0.515 meV.K-1. In addition, the activation energy was fitted to be 43.01 meV, illustrating that the main carrier decay channel exhibits exciton recombination. The quasi-rectangular cross-sectional Sn-doped CdS nanowire-based photodetectors presented a maximum current on/off ratio of 3 X 10(2). The photoresponsivity and specific detectivity were estimated to be 0.22 mA/W and of 1.14 x 10(12) Jones under the illumination of 405 nm laser with a laser density of 495 mu W/cm(2) at V-DS = 3 V. Moreover, n type doping behavior is determined by the field effect transistor device, and the field effect mobility is calculated to be 0.18 cm(2).V-1.s(-1). Our work provides a new way to tailor the properties of CdS for the application in integrated photonic and optoelectronic devices.

Sn-Doped CdS Nanowires with Low-Temperature Lasing by CW-Laser Excitation

Photoluminescence and Boosting Electron–Phonon Coupling in CdS Nanowires with Variable Sn(IV) Dopant Concentration

Optical and Optoelectronic Performances of Quasi-Rectangular Cross-Sectional Sn-Doped CdS Nanowires

Fast Lasing Wavelength Tuning in Single Nanowires

Optical Waveguide and Room Temperature High-Quality Nanolasers from Tin-Catalyzed CdSSe Nanostructures

Lasing in Single Cadmium Sulfide Nanowire Optical Cavities

Low-threshold Nanowire Laser Based on Composition-Symmetric Semiconductor Nanowires.

Fabrication of CdS/Cd–Sn heterostructure nanowires and their photoluminescence property

Controllable Synthesis of CdS Nanowire by a Facile Solvothermal Method and Its Temperature Dependent Photoluminescent Property

Stimulated Emissions in Aligned CdS Nanowires at Room Temperature.

Synthesis and photoluminescence of pure and Mn doped CdS nanowires

High-Quality Hexagonal Nonlayered CdS Nanoplatelets for Low-Threshold Whispering-Gallery-Mode Lasing.

Excitation-Power-Dependent Color Tuning in a Single Sn-Doped CdS Nanowire

Low-Temperature Growth and Photoluminescence of SnO2 Nanowires

Preparation And Periodic Emission Of Superlattice Cds/Cds:Sns2 Microwires

Temperature dependent photoluminescence of single CdS nanowires

Exciton-Related Photoluminescence and Lasing in Cds Nanobelts

Color-tunable Photoluminescence from In-doped CdS Nanowires

Surface-Related Exciton and Lasing in CdS Nanostructures

Temperature Dependent Raman and Photoluminescence of an Individual Sn-Doped Cds Branched Nanostructure