Fabrication of CdS/Cd–Sn heterostructure nanowires and their photoluminescence property

M. Lei,L.Q. Qian,Q.R. Hu,S.L. Wang,W.H. Tang
DOI: https://doi.org/10.1016/j.jallcom.2009.07.180
IF: 6.2
2009-01-01
Journal of Alloys and Compounds
Abstract:We designed a facile one-step thermal evaporation approach to synthesize CdS/Cd-Sn heterostructure nanowires using mixture of CdS nanoparticles and metal Sri powders as precursor. The heterostructure nanowires were composed of CdS nanowires and Cd-Sn alloy nanoparticles second grown on the nanowire surface. These heterostructure nanowires were grown along the [0001] polar direction, and the average diameter and length was about 150 nm and 5 mu m, respectively. Photoluminescence (PL) spectrum revealed a strong blue emission centered at 468 nm and a weak band-gap emission centered at 506 nm, respectively. It is found that large amount of surface defects originated from the interface between the CdS nanowires and Cd-Sn alloy nanoparticles was the main reason for the unique blue emission band of the heterostructure nanowires. (C) 2009 Elsevier B.V. All rights reserved.
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