A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction

Chaoyang Tan,Huanhuan Wang,Xiangde Zhu,Wenshuai Gao,Hui Li,Jiawang Chen,Gang Li,Lijie Chen,Junmin Xu,Xiaozong Hu,Liang Li,Tianyou Zhai
DOI: https://doi.org/10.1021/acsami.0c11456
IF: 9.5
2020-01-01
ACS Applied Materials & Interfaces
Abstract:Lateral homojunctions made of two-dimensional (2D) layered materials are promising for optoelectronic and electronic applications. Here, we report the lateral WSe2-WSe2 homojunction photodiodes formed spontaneously by thickness modulation in which there are unique band structures of a unilateral depletion region. The electrically tunable junctions can be switched from nn to pp diodes, and the corresponding rectification ratio increases from about 1 to 1.2 x 10(4). In addition, an obvious photovoltaic behavior is observed at zero gate voltage, which exhibits a large open voltage of 0.49 V and a short-circuit current of 0.125 nA under visible light irradiation. In addition, due to the unilateral depletion region, the diode can achieve a high detectivity of 4.4 x 10(10) Jones and a fast photoresponse speed of 0.18 ms at V-gg = 0 and V-ds = 0. The studies not only demonstrated the great potential of the lateral homojunction photodiodes for a self-power photodetector but also allowed for the development of other functional devices, such as a nonvolatile programmable diode for logic rectifiers.
What problem does this paper attempt to address?