Atomistic origin of high-concentration Ce3+ in {100}-faceted Cr-substituted CeO2 nanocrystals
Xiaodong Hao,Akira Yoko,Kazutoshi Inoue,Yang Xu,Mitsuhiro Saito,Chunlin Chen,Gimyeong Seong,Takaaki Tomai,Seiichi Takami,Alexander L. Shluger,Bingshe Xu,Tadafumi Adschiri,Yuichi Ikuhara
DOI: https://doi.org/10.1016/j.actamat.2020.11.015
IF: 9.4
2021-01-01
Acta Materialia
Abstract:Improving the potential of promising CeO2-based nanocatalysts in practical applications requires an atomic-scale analysis of the effects of active dopants on the distribution of Ce valence states and the formation of oxygen vacancies (V Os). In this study, a Cr dopant is introduced into the cubic {100}-faceted CeO2 nanocrystals (NCs) with an average size of 7.8 nm via supercritical water. The Cr dopants substitute Ce sites in the amount of approximately 3 mol%. Based on the aberration-corrected STEM-EELS, the effects of Cr dopant on the distribution of cerium valence states are investigated layer by layer across the ultrafine Cr-substituted CeO2 NC perpendicular to the {100} exposed facet. It is found that an increased amount of Ce3+ cations is present in Cr-substituted CeO2 NCs, particularly in the internal atomic layers, compared to the pristine CeO2 NCs. The atomic-scale analysis of the local structure combined with theoretical calculations demonstrates that Cr dopant reduces the formation energy of V Os and increases the mobility of oxygen atoms for the nano-sized CeO2. These effects, in principle, result in an improved oxygen storage capacity and provide a fundamental understanding of role of the dopant in the formation and distribution of V Os in the doped CeO2 NCs.
materials science, multidisciplinary,metallurgy & metallurgical engineering