Abstract:Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We observe a reduced of Schottky barrier < 50 meV by using TiO2/Co contacts, which could be further tuned by gate voltages. Eminently a good transistor performance is achieved in BP devices, with drain current modulation on the order of four to six orders of magnitude. The charge carrier mobility is found to be 155 and 0.18 cm V s for holes and electrons respectively at room temperature. Furthermore, magnetoresistance calculations reveal that the resistances of the BP device with applied gate voltages are in the appropriate range for injection and detection of spin polarized holes. Our results demonstrate the prospect of engineering BP nanolayered devices for efficient nanoelectronic and spintronic applications. 33. Strain enhanced anisotropic thermoelectric performance of Black Phosphorus Guangzhao Qin, Zhenzhen Qin, Sheng-Ying Yue, Hui-Juan Cui, QingRong Zheng, Qing-Bo Yan, Gang Su arXiv:1406.0261 http://arxiv.org/abs/1406.0261 Abstract: The anisotropic geometric, electronic, and thermoelectric (TE) properties of bulk black phosphorus (BP) with strain applied along three lattice directions have been systematically investigated using first-principles calculations combined with semi-classical Boltzmann transport theory. The lattice constant b always increase whatever compressive or tensile strain is applied along z direction, showing an unusual mechanical response with a transition between positive and negative Poisson’s ratio, which may due to the hinge-like structure of BP. The electronic properties are sensitive to strain that there exist transitions of band gap among direct, indirect and zero with strain varying from compressive to tensile. For the TE performance of BP, when there is no strain applied, the ZT value is found to be maximal along x direction as 0.722 at 800K with an electron (n-type) doping concentration of 6.005×10cm, while being smaller for hole (p-type) doping or along other directions, indicating a distinctly anisotropic TE performance. Furthermore, the greatest enhanced ZT values could be obtained for electron (n-type) doped BP as 0.866 at 800K with a tensile strain of 7% applied along y direction. 34. Electronic Structures of Black Phosphorus Studied by Angleresolved Photoemission Spectroscopy

Abstract Submitted for the MAR17 Meeting of The American Physical Society Anomalous Size Dependence of Optical Properties in Black Phos-

Anomalous Size Dependence of Optical Properties in Black Phosphorus Quantum Dots

Photoluminescence Lifetime and Absorption Spectrum of Pbs Nanocrystal Quantum Dots

Photoabsorption Tolerance of Intrinsic Point Defects and Oxidation in Black Phosphorus Quantum Dots.

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Abnormal Near-Infrared Absorption in 2D Black Phosphorus Induced by Ag Nanoclusters Surface Functionalization.

Substrate effects on the exciton fine structure of black phosphorus quantum dots

Optical Transitions Inpbte∕cdtequantum Dots

Black phosphorus quantum dots: Nonlinear optical modulation material with ultraviolet saturable absorption

Size-Dependent Saturable Absorption and Mode-Locking of Dispersed Black Phosphorus Nanosheets

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Anisotropic Ultraviolet-Plasmon Dispersion In Black Phosphorus

Abnormal Negative Thermal Quenching of Photoluminescence (PL) in Laser-Induced Exfoliated Black Phosphorus Quantum Dots for Applications as a Semiconductor PL Nanomaterial

Charging energy spectrum of black phosphorus quantum dots

Charge Transfer Doping Modulated Raman Scattering and Enhanced Stability of Black Phosphorus Quantum Dots on a ZnO Nanorod

Informal Phosphorene Symposium

Optical Tuning of the Terahertz Response of Black Phosphorus Quantum Dots: Effects of Weak Carrier Confinement

Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure

Black Phosphorus: Abnormal Near-Infrared Absorption in 2D Black Phosphorus Induced by Ag Nanoclusters Surface Functionalization (Adv. Mater. 43/2018)

Covalent Functionalized Black Phosphorus Quantum Dots

Small Molecule-Assisted Fabrication of Black Phosphorus Quantum Dots with a Broadband Nonlinear Optical Response.