O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1 . 1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

Aravind Kumar Chandiran,Nicolas Tetreault,Robin Humphry-Baker,Florian Kessler,Etienne Barano,Chenyi Yi,Mohammad Khaja Nazeeruddin,Michael Graẗzel
2012-01-01
Abstract:Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dyesensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record opencircuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga2O3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO2 conduction band and the hole injection into the electrolyte are characterized in detail.
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