CRYOGENIC CHARACTERISTICS OF HIGH ELECTRON MOBILITY TRANSISTOR AND LOW NOISE AMPLIFIERS

王昕,王凡,张晓平,郜龙马,魏斌,曹必松,高葆新
DOI: https://doi.org/10.3969/j.issn.1000-3258.2005.02.011
2005-01-01
Abstract:High Temperature Superconductor (HTS) receiver front-end subsystem for mobile telecommunications is one application in microwave circuit. The system aims to the possibility of high selectivity and high sensitivity and low noise figure. HTS receiver front end contains HTS filters and cryogenic low noise amplifiers (CLNA). Research of Cryogenic Physical and Electrical characteristics of High Electron Mobility transistor (HEMT) is necessary for design CLNA. In this paper, the physics and electronic characteristic of HEMT transistor in cryogenic temperature, and the performance of cryogenic low noise amplifier (LNA) which used for high temperature superconducting receiver front end have been reported. The cryogenic LNA has extremely low noise figure in 60K working temperature. The electronic parameters of circuit components were measured in 60K temperature including the HEMT Transistor. The measurement result of the LNA matches the simulation result of the design. The working frequency band of the LNA is from 800MHz to 850MHz, Gain is above 18dB, noise figure is lower than 0.22dB, input and output standing wave ratio are less than 1.2.
What problem does this paper attempt to address?