Realization of pressure induced emission enhancement for rare earth luminescent materials: Adopting delta-doped structure
Huafang Zhang,Sumin Hou,Tao Wang,Shijie Liu,Xigui Yang,Quanjun Li,Pengfei Shen,BingBing Liu,Huiping Gao,Yanli Mao
DOI: https://doi.org/10.1016/j.jallcom.2020.157882
IF: 6.2
2021-04-01
Journal of Alloys and Compounds
Abstract:Design and enhancing the luminescence of rare earth materials under pressure have been important topics in the past few years. Here we report a new strategy for realizing pressure induced emission enhancement of rare earth element thulium (Tm) by confining the dopant luminescentions in a two-dimensional hexagonal NaYF4 planes, NaYF4@β-NaYF4:Yb0.2,Tm0.005@NaYF4 delta-doped structure. Upon compression, NaYF4@β-NaYF4:Yb0.2,Tm0.005@NaYF4 exhibits a 2 fold increase in emissions, obviously higher than that of corresponding homogeneous doped samples. When Tm3+ was overdoped, this pressure induced emissions enhancement would absent in the whole pressure region due to concentration quenching. Moreover, both NaYF4@β-NaYF4:Yb0.2,Tm0.005@NaYF4 and corresponding homogeneous doped samples undergo structure transition under pressure. Raman study and calculations show that the delta-doping induced phonon peak red shift and reduced defects density increasing rate could play major roles for the pressure-induced emission enhancement of NaYF4@β-NaYF4:Yb0.2,Tm0.005@NaYF4, and the deformation of the Y-F9 polyhedrons at vertices leading to the structure transitions of both delta and homogeneous doped samples. These findings suggest that the pressure induced emission enhancement of rare earth materials can be realized by passivating inner and surface defects using a delta-doped structure.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering