Abstract:The next generation infrared (IR) detection technology demands for very-large-format focal plane arrays (FPAs) with high performance. Semiconductor up-converters can convert IR photons to near-infrared (NIR) photons, and can be potential candidates for large-format IR imaging since the mechanical bonding with the read-out circuits can be avoided. However, previously reported up-converters and corresponding up-conversion systems suffer from low detectivity because of the trade-off between responsivity and dark current. To solve this issue, a cascade infrared up-converter (CIUP) is demonstrated in this work. Based on a quantum cascade transport mechanism, high IR responsivity is achieved while the dark current is maintained fairly low. A 4-mu m InGaAs/AlGaAs CIUP has been fabricated, and both the CIUP and up-conversion system are under background-limited infrared performance (BLIP) regime below 120 K. The upconversion efficiency is 2.1 mW/W at 3.3 V and 78 K. Taking shot noise as the main noise in the up-conversion system, the BLIP detectivity of the system is 2.4x10(9) Jones at 3.3 V and 78 K, higher than the semiconductor up-converters at similar wavelengths reported so far. To further improve the CIUP performance, an AlInP hole-blocking layer is introduced taking place of the AlAs layer. AlInP/GaAs has larger valence band discontinuity than AlAs/GaAs, showing the advantage of tightly confining injected holes into the emission quantum well. By adopting the AlInP hole-blocking layer, the quantum efficiency and detectivity of the up-conversion system can be enhanced.

Influence of emission quantum wells on the efficiency of up-conversion infrared photodetectors

Improvement on the efficiency of up-conversion infrared photodetectors using surface microstructure

Elaborating the interplay between the detecting unit and emitting unit in infrared quantum dot up-conversion photodetectors

Fabrication and Investigation of an Upconversion Quantum-Well Infrared Photodetector Integrated with a Light-Emitting Diode

A GaAs-based Up-Converter for Mid-Infrared Detection Utilizing Quantum Cascade Transport

An InP-Based Mid-Wave Infrared Up-Converter Utilizing Cascade Carrier Transportation

Highly Efficient Metallic Optical Incouplers for Quantum Well Infrared Photodetectors

Semiconductor Up-Converter Based on Cascade Carrier Transport for Infrared Detection/Imaging

Imaging Characteristics and Quantum Efficiency: Key Properties for Pixelless Far-Infrared Semiconductor Upconversion Imaging Devices

Quantum structure optimization for infrared detection

Studies on absorption efficiency enhancement of quantum well infrared photodetector by using photonic crystal structures

Mid-Infrared Upconversion Imaging Under Different Illumination Conditions

Improvement on Performance of Cascade Infrared Up-Converter Using Metal Grid Electrodes

Ultra-broadband Frequency Up-Converter Based on AlGaAs\GaAs Heterojunction Detector

Optoelectronic Transport Mechanism from Subband Infrared Absorption and Tunneling Regeneration

Model for Efficient Upconversion Detection at Mid-Infrared

Metasurface Enhanced Upconversion Efficiency for High-Performance Pixel-Less Thermal Imaging

High-Performance Up-Conversion Photodetectors with Zero-Barrier Interconnection via Self-Assembled Surface Dipoles

Quantum-Tuned Cascade Multijunction Infrared Photodetector

Study on the Infrared Detector Based on the Electron Wave Interference

Infrared Detector Based On Interband Transition Of Semiconductor Quantum Well Within P-N Junction