Dual-band polarized photodetector based on van der Waals heterojunction
Jianlu Wang,Shukui Zhang,Hanxue Jiao,Yan Chen,Ruotong Yin,Xinning Huang,Qi‐Hua Zhao,Chong Tan,Shenyang Huang,Hugen Yan,Tie Lin,Hong Shen,Juan Ge,Xiangjian Meng,Weida Hu,Ning Dai,Xudong Wang,Junhao Chu
DOI: https://doi.org/10.21203/rs.3.rs-3282835/v1
2023-01-01
Abstract:Abstract The acquisition of multi-dimensional optical information, including light intensity, spectrum, polarization, and phase, is a crucial aspect in the advancement of next-generation infrared photodetectors. However, the acquisition of multi-dimensional optical information on a single photodetector presents a significant challenge. Here, we present a multi-dimensional infrared optical information photodetector based on van der Waals heterojunction. It can obtain dual-band information (2.5–4.2 µm and 4.3–4.9 µm) and the polarization state of the target by adjusting the bias polarity. The device employs two anisotropic narrow bandgap semiconductors (black phosphorus and black arsenic phosphorus) and a wide bandgap semiconductor (molybdenum disulfide) to form a PNP-type van der Waals heterojunction. By controlling the thickness and stacking angle of the two anisotropic materials, selective absorption of incident light of different wavelengths and different polarization states is achieved. As a result, our device exhibits a dual-band response by changing the polarity of applied bias, allowing for polarization detection in both spectral ranges. The blackbody detection sensitivity of the device in the mid-wave infrared region is over 1×10 10 cmHz 1/2 W -1 at room temperature. Its polarization extinction ratio reaches 24.7 under forward bias and 11.8 under reverse bias. This work shows promise in the development of next-generation of infrared photodetectors capable of acquiring multi-dimensional information.