Improved Luminescence and Afterglow Emission from Mn2+/Si4+ Co-Doped AlN by Combustion Synthesis Method
Zhanglin Chen,Wei Cui,Kaiming Zhu,Chunguang Zhang,Chuandong Zuo,Yude Niu,Qi Wang,Xuanyi Yuan,Guanghua Liu
DOI: https://doi.org/10.1016/j.jallcom.2021.160745
IF: 6.2
2021-01-01
Journal of Alloys and Compounds
Abstract:An orange-red emitting Mn2+/Si4+ co-doped AlN phosphor was prepared by an efficient combustion synthesis method. Phase identification and structure characterization were performed using powder X-ray diffraction (XRD) and refined by the Rietveld method. Luminescence and afterglow properties of the AlN-based phosphors such as photoluminescence spectra (PL), CIE values, afterglow decay curves, thermoluminescence glow curves (TL) were systematically studied. Using the Tanabe-Sugano diagram, the Racah parameters B, C, and crystal field splitting parameter Dq of as-prepared phosphor were calculated to be 812 cm(-1), 2168 cm(-1), and 780 cm(-1), respectively. The luminescence intensity and afterglow time were increased, respectively, by about 1.1 and 2.2 times after 3% Si4+ co-doping. Particular attention was paid to study the mechanism of Si4+ co-doping on improving luminescence properties using a combination of the above-mentioned method and X-ray photoelectron spectroscope (XPS). Two hypothetical stress cancellation and charge rebalance effects due to Si4+ co-doping were discussed. Besides, it was found a shallower trap level (0.56 eV, compared to 0.84 eV for those without Si4+ co-doping) was formed after the co-doping of Si4+, which results in enhanced afterglow performance. (C) 2021 Elsevier B.V. All rights reserved.