Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors
Yu Wang,Xintong Chen,Daqi Shen,Miaocheng Zhang,Xi Chen,Xingyu Chen,Weijing Shao,Hong Gu,Jianguang Xu,Ertao Hu,Lei Wang,Rongqing Xu,Yi Tong
DOI: https://doi.org/10.3390/nano11112860
IF: 5.3
2021-10-27
Nanomaterials
Abstract:Artificial synapses and neurons are two critical, fundamental bricks for constructing hardware neural networks. Owing to its high-density integration, outstanding nonlinearity, and modulated plasticity, memristors have attracted emerging attention on emulating biological synapses and neurons. However, fabricating a low-power and robust memristor-based artificial neuron without extra electrical components is still a challenge for brain-inspired systems. In this work, we demonstrate a single two-dimensional (2D) MXene(V2C)-based threshold switching (TS) memristor to emulate a leaky integrate-and-fire (LIF) neuron without auxiliary circuits, originating from the Ag diffusion-based filamentary mechanism. Moreover, our V2C-based artificial neurons faithfully achieve multiple neural functions including leaky integration, threshold-driven fire, self-relaxation, and linear strength-modulated spike frequency characteristics. This work demonstrates that three-atom-type MXene (e.g., V2C) memristors may provide an efficient method to construct the hardware neuromorphic computing systems.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry