Abstract:Exploring room-temperature intrinsic magnetism in two-dimensional (2D) materials for nanoscale spintronic devices has garnered significant interest. Achieving a high Curie temperature and substantial spin polarization in 2D ferromagnetic materials remains challenging. Drawing inspiration from the substantial enhancement of the Curie temperature observed in ferromagnetic CrIS monolayers by manipulating the covalent nature of Cr-S bonds, our study systematically delves into the electronic structure and magnetic properties of Janus M2X3Y3 (M = V, Cr, Mn, Fe, and Co; X = Cl, Br, I; Y = S, Se, and Te) monolayers through first-principles calculations. Our findings reveal that 15 kinds of these monolayers exhibit dynamic and thermodynamic stability while displaying diverse electronic and ferromagnetic characteristics. Notably, Mn2I3S3 demonstrates half-metallicity and in-plane magnetic anisotropy, while Cr2I3Se3 exhibits a half-semiconductor and perpendicular magnetic anisotropy. Consequently, Mn2I3S3 transforms from in-plane to perpendicular magnetic anisotropy through strain manipulation. Cr2I3Se3, under strain, transforms from a half-semiconductor to a bipolar magnetic semiconductor. The strong coupling caused by the M-Y bonds makes them have a Curie temperature higher than room temperature. The unique magnetic properties exhibited by the 2D Janus Mn2I3S3 and Cr2I3Se3 magnets hold promise for applications in spintronics. Our study provides a foundational understanding for future experimental explorations in this exciting research area.

Prediction Of Room-Temperature Multiferroicity In Strained Mocr2s6 Monolayer

Prediction Of Intrinsic Ferromagnetic Ferroelectricity In A Transition-Metal Halide Monolayer

Room-temperature ferromagnetism and half-metallicity in monolayer orthorhombic CrS2

Room-temperature Multiferroicity and Diversified Magnetoelectric Couplings in 2D Materials

Strain-tunable magnetic and electronic properties of monolayer CrI 3 .

Enabling Room-Temperature Triferroic Coupling in Dual Transition-Metal Dichalcogenide Monolayers Via Electronic Asymmetry

Ferroelectric-ferromagnetic multiferroicity driven by 3d-electrons in TiCrO4 monolayer

Intrinsic Multiferroic MnOF Monolayer with Room-Temperature Ferromagnetism

Room Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-metallic Monolayer CrTe

Designing Asymmetric Multiferroics with Strong Magnetoelectric Coupling

Prediction of A Multiferroic State with Large Electric Polarization in Tensile-Strained Tbmno3

First-principles predictions of room-temperature ferromagnetism in orthorhombic MnX2 (X = O, S) monolayers

Ferromagnetic InMoTe3 monolayer with strain-modulated magnetic interactions and Curie temperature

Moire magnetism in CrBr3 multilayers emerging from differential strain

Two-Dimensional Organic-Inorganic Room-Temperature Multiferroic

Designing a ferrimagnetic-ferroelastic multiferroic semiconductor in FeMoClO 4 nanosheets via element substitution.

Designing a ferrimagnetic-ferroelastic multiferroic semiconductor in FeMoClO<sub>4</sub> nanosheets <i>via</i> element substitution

Near Room-Temperature Multiferroic Materials with Tunable Ferromagnetic and Electrical Properties

Prediction of LiCrTe$_2$ monolayer as a half-metallic ferromagnet with a high Curie temperature

First-principles Prediction of a Room-Temperature Ferromagnetic and Ferroelastic 2D Multiferroic MnNX (X = F, Cl, Br, and I).

Two-Dimensional Room-Temperature Magnetism in Janus Mn2I3S3 and Cr2I3Se3 Monolayers with Tunable Magnetic Properties by Strain Engineering.