Abstract:Light emitting diodes (LEDs) in the deep ultra-violet (DUV) offer new perspectives for multiple applications ranging from 3D printing to sterilization. However, insufficient light extraction severely limits their efficiency. Nanostructured sapphire substrates in aluminum nitride based LED devices have recently shown to improve crystal growth properties, while their impact on light extraction has not been fully verified. We present a model for understanding the impact of nanostructures on the light extraction capability of DUV-LEDs. The model assumes an isotropic light source in the semiconductor layer stack and combines rigorously computed scattering matrices with a multilayer solver. We find that the optical benefit of using a nanopatterned as opposed to a planar sapphire substrate to be negligible, if parasitic absorption in the p-side of the LED is dominant. If losses in the p-side are reduced to 20%, then for a wavelength of 265 nm an increase of light extraction efficiency from 7.8% to 25.0% is possible due to nanostructuring. We introduce a concept using a diffuse ('Lambertian') reflector as p-contact, further increasing the light extraction efficiency to 34.2%. The results underline that transparent p-sides and reflective p-contacts in DUV-LEDs are indispensable for enhanced light extraction regardless of the interface texture between semiconductor and sapphire substrate. The optical design guidelines presented in this study will accelerate the development of high-efficiency DUV-LEDs, but the model is also readily applicable to other multilayer opto-electronic nanostructured devices such as photovoltaics or photodetectors.

Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning P-Algan/p-gan Layer with Ni/Au/Al High-Reflectivity Electrodes

Colloidal etching of deep ultraviolet LED with improved light extraction efficiency

Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs

The Dependence of Light Extraction Improvement on Optimized Surface Microstructure for AlGaN-based UVC-LEDs Considering TM-polarized Emission

Improved Light Extraction Efficiency of AlGaN Deep-Ultraviolet Light Emitting Diodes Combining Ag-nanodots/Al Reflective Electrode with Highly Transparent P-Type Layer.

Light Extraction Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Substrate Sidewall Roughening

Enhanced Light Extraction by Optimizing Surface Microstructure for AlGaN-based Deep Ultraviolet Light Emitting Diodes with 265 and 280 Nm Emission

Maximizing the Light Extraction Efficiency for AlGaN-Based DUV-LEDs with Two Optimally Designed Surface Structures under the Guidance of PSO

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer

The Transmission Modulation Effect of Patterns on the Light Extraction of Ultraviolet-C Light Emitting Diodes

On the origin of the enhanced light extraction efficiency of DUV LED by using inclined sidewalls

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Anisotropic Dependence of Light Extraction Behavior on Propagation Path in AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Nanopatterned Sapphire Substrates in Deep-UV LEDs: Is there an Optical Benefit?

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Promoting Light Extraction Efficiency of Ultraviolet Light Emitting Diodes by Nanostructure Optimization

Enhancing external quantum efficiency of deep ultraviolet micro-LEDs through geometry design and multi-physics field coupling analysis

Effect of the self-aligned etching thin p-GaN layer on the performance of AlGaN-based DUV LEDs with various chip sizes