Thermally Assisted Skyrmion Memory (TA-SKM)

Shijiang Luo,Nuo Xu,Yaoyuan Wang,Jeongmin Hong,Long You
DOI: https://doi.org/10.1109/led.2020.2986312
IF: 4.8157
2020-01-01
IEEE Electron Device Letters
Abstract:A novel thermally assisted skyrmion memory (TA-SKM) has been proposed and studied for the first time. Unidirectional current-induced spin transfer torque (STT) and Joule heating effect are used to induce the magnetization switching between uniform and skyrmion states in the free layer of a magnetic tunnel junction device. Physics-based simulations suggest that TA-SKM offers advantages including unipolar switching feature for cross-point memory integration, better TMR design as compared to STT-MRAM, and improved operation temperature range as compared to TA-MRAM.
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