A new mechanism of Raman enhancement and its application.
Yizhuang Xu,Jinguang Wu,Wenxiu Sun,Dongliang Tao,Limin Yang,Zengfu Song,Shifu Weng,Zhenhua Xu,Roger D Soloway,Duanfu Xu,Guangxian Xu
DOI: https://doi.org/10.1002/1521-3765(20021202)8:23<5323::AID-CHEM5323>3.0.CO;2-E
2002-01-01
Chemistry - A European Journal
Abstract:Strong electronic Raman bands corresponding to the transition between I-4(9/2) and manifolds of Nd3+, caused by a Raman-enhancement effect, are observed in the FT-Raman spectrum of Nd2O3. Neither resonance enhancement (RR) nor surface enhancement (SERS) accounts for the Raman enhancement observed here. We propose a new mechanism of Raman enhancement called the "feed-back" mechanism. A YAG laser excites the final state of the Raman transition (I-4(11/2), of Nd3+) to the F-4(3/2) state and causes a significant decrease in the population of Nd3+ at the I-4(11/2) state. This causes the population ratio of Nd3+ at I-4(9/2) and I-4(11/2), to deviate from the value required by Boltzmann's law. To restore equilibrium, Raman scattering is enhanced so that more Nd3+ ions are brought from the I-4(9/2) state to the I-4(11/2) state. Ibis hypothesis gets support from the temperature-variable FT-Raman spectroscopic results. Additionally, obvious differences between the Stokes and anti-Stokes Raman spectrum of Nd3+ provide further evidence to support the feed-back mechanism. The Raman-enhancement effect confers on the electronic Raman bands a special ability to reflect the variation of coordinated structure around metal ions. The structural variations in polymer-metal ion composites and biomineralization systems have been investigated by using the electronic Raman bands.