Thermal Contact Resistance Optimization of Press-Pack IGBT Device Based on Liquid Metal Thermal Interface Material

Xiao Wang,Hui Li,Ran Yao,Wei Lai,Renkuan Liu,Renze Yu,Xianping Chen,Jinyuan Li
DOI: https://doi.org/10.1109/tpel.2021.3129846
IF: 5.967
2022-05-01
IEEE Transactions on Power Electronics
Abstract:Thermal contact resistances usually account for more than 50 of the total thermal resistance in a press-pack insulated-gate bipolar transistor (PP-IGBT) device, which affect the heat dissipation of the PP-IGBT device and lead to a high junction temperature. In this article, a method for optimizing the thermal contact resistances of the PP-IGBT device is proposed by filling the liquid metal thermal interface materials in the contact surface. Bismuth-based liquid metal with high thermal conductivity and electrical conductivity is chosen, and the material is used for filling between the insulated-gate bipolar transistor chip and the molybdenum layers. The thermal characteristics are compared with the traditional commercial PP-IGBT device using finite-element simulation and experimental methods. The high-voltage insulation reliability of the proposed optimized method is verified by blocking voltage test, and the long-term reliability of the device is verified by a power cycling test. The results show that the junction-to-case thermal resistance of the optimized PP-IGBT device can be reduced by more than 30, which is helpful for improving the thermal reliability of large-capacity PP-IGBT devices.
engineering, electrical & electronic
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