Abstract:Using a facile N,N‐dimethylformamide (DMF) post‐treatment, a VO4 vacancy gradient is created in bismuth vanadate (BiVO4) photoanode, which regulates the gradient band structure with an upward band to allow holes to rapidly migrate toward the surface of BiVO4 film, thereby boosting the bulk/surface charge separation and the solar‐driven water splitting performance. Although bismuth vanadate (BiVO4) photoanode has been widely used, the solar‐driven oxygen evolution reaction (OER) performance is constrained due to the substantial bulk recombination and poor mobility of charge carriers. Herein, a facile solvothermal post‐treatment approach that employs N,N‐dimethylformamide (DMF) is developed to induce a VO4 vacancy gradient from bulk to surface of BiVO4 film, which not only improves the charge diffusion but also establishes an advantageous upward band gradient to promote the bulk hole transport. Under Air Mass 1.5 Global (AM1.5G) simulated solar illumination, the optimized BiVO4 photoanode with a VO4 vacancy gradient (denoted as B(VO)1‐δ) exhibits excellent OER performance with a charge separation efficiency of 74.4% at 1.23 V versus reversible hydrogen electrode (RHE) and incident‐photon‐to‐current conversion efficiency of 30.7% at 445 nm, 1.2 and 1.4 times higher than that of the pristine BiVO4, respectively. After loading nickel‐iron hydroxyl oxide (NiFeOOH) as a cocatalyst, the photocurrent density of B(VO)1‐δ escalates to 5.92 mA cm−2 in a hole scavenger (Na2SO3) solution and 5.07 mA cm−2 in a potassium borate buffer solution at 1.23 V versus RHE, far superior to the pristine BiVO4. This work highlights that the gradient‐tuned VO4 vacancies can effectively modulate the bulk band structure and charge transfer in BiVO4 photoanode, providing a new strategy for boosting solar water splitting performance.

In Situ Formation of Oxygen Vacancies Achieving Near-Complete Charge Separation in Planar BiVO4 Photoanodes.

Dual Modification of BiVO4 Photoanode by Enriching Bulk and Surface Oxygen Vacancies for Enhanced Photoelectrochemical Performance.

New BiVO4 Dual Photoanodes with Enriched Oxygen Vacancies for Efficient Solar-Driven Water Splitting

Enriched Surface Oxygen Vacancies of Photoanodes by Photoetching with Enhanced Charge Separation

Boosting the Performance of BiVO4 Photoanodes by the Simultaneous Introduction of Oxygen Vacancies and Cocatalyst Via Photoelectrodeposition.

Gradient‐Tuned VO4 Vacancies in BiVO4 Photoanode for Boosting Bulk Hole Transport and Oxygen Evolution Reaction Performance

Nanoporous BiVO4 Photoanodes with Dual-Layer Oxygen Evolution Catalysts for Solar Water Splitting

Oxygen vacancy induced defect dipoles in BiVO4 for photoelectrocatalytic partial oxidation of methane

Freeing the polarons to facilitate charge transport in BiVO4 from oxygen vacancies with an oxidative 2D precursor.

Creation of oxygen vacancies to activate 2D BiVO4 photoanode by photoassisted self‐reduction for enhanced solar‐driven water splitting

Hydrothermal-Dependent Oxygen Vacancy-Rich NiFe Layered Double Hydroxide/BiVO4 Photoanodes for Stable Solar Water Splitting

Bismuth Vacancies Induced Lattice Strain in BiVO4 Photoanodes Boosting Charge Separation For Water Oxidation

Polaron-Mediated Transport in BiVO4 Photoanodes for Solar Water Oxidation

Vacancy defect engineering of BiVO 4 photoanodes for photoelectrochemical water splitting

Polaron-Mediated Transport in BiVO 4 Photoanodes for Solar Water Oxidation

Tailoring Carrier Dynamics of BiVO4 Photoanode via Dual Incorporation of Au and Co(OH)x Cooperative Modification for Photoelectrochemical Water Splitting

Charge Transport Enhancement in BiVO4 Photoanode for Efficient Solar Water Oxidation

Oxygen vacancies activating surface reactivity to favor charge separation and transfer in nanoporous BiVO4 photoanodes

Understanding The Role Of Vanadium Vacancies In Bivo4 For Efficient Photoelectrochemical Water Oxidation

Enhanced Charge Separation in Nanoporous BiVO4 by External Electron Transport Layer Boosts Solar Water Splitting

Oxygen vacancy-abundant carbon quantum dots as superfast hole transport channel for vastly improving surface charge transfer efficiency of BiVO4 photoanode