Abstract:STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) is a potential candidate for the requirement of many IoT and wearable device, which thanks to its fast write speed, negligible leakage current, and high endurance. Nevertheless, the challenge of STT-MRAM voltagemode read scheme still exist, firstly, the bit line (BL) voltage (V BL ) drops from the pre-charge read voltage (V BL_RD ) to 0V quite quickly, which can result in a small effective sensing window (T SMW ), which is the period when the sense amplifier's (SA) input voltage larger than its offset voltage (V OS ). The second issue is that the occurrence time of maximum read- signal margin (V RSM ) usually is different in different cells due to the resistance variation. Consequently, the valid T SMW is quite small, and the limited T SMW leads to a decrease of V RSM and an increase of BL development time. When a conventional voltage-mode sense amplifier (VSA) is used with a common activated timing, the signal to be amplified will encounter degradation at the VSA's differential inputs and lead to a sensing failure at a low V BL_RD . This paper proposes a selftimed sensing unit that can dynamically track the change of BL voltage, a couple SAs in the unit are reconfigured to the opposite offset states to monitor each other's sensing results, and the sensing operation is immediately stopped when the sensing result is correct. The simulation results show that the proposed architecture can extend T SMW significantly and the sensing yield will be improved effectively.

A Self-Timing Voltage-Mode Sense Amplifier for STT-MRAM Sensing Yield Improvement

A Self-Timed Voltage-Mode Sensing Scheme With Successive Sensing and Checking for STT-MRAM

Timing Optimization Model and PVT Tracked Scheme for STT-MRAM Voltage-Mode Sense

High Speed and Reliable Sensing Scheme with Three Voltages for STT-MRAM.

Stability and Variability Emphasized STT-MRAM Sensing Circuit with Performance Enhancement

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Towards Near LLC Speed STT-MRAM Sensing Using Reconfigurable Clock Trimming.

A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM.

A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Dual reference sensing scheme with triple steady states for deeply scaled STT-MRAM

Data-cell-variation-tolerant triple sampling non-destructive self-reference sensing scheme of STT-MRAM

A 28 nm full-margin, high-reliability, and ultra-low-power consumption sense amplifier for STT-MRAM

A Timing-Shared Adaptive Sensing Methodology for Low-Voltage SRAM

Triple Sensing Current Margin for Maintainable MRAM Yield at Sub-100% Tunnel Magnetoresistance Ratio

A Low-power High-reliability STT-MRAM Write Scheme with Real-time Voltage Sensing Module

Differential MRAM Sensing Scheme With Magnetoresistance Boosted 4T-2MTJ Bit-Cell

A High Reliability Sense Amplifier for Computing In-Memory with STT-MRAM

Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

A Novel Sense Amplifier to Mitigate the Impact of NBTI and PVT Variations for STT-MRAM

A High-reliability Reading Scheme for STT-MRAM with a Symmetric Dual-reference Sensing Amplifier