Grain Boundary Induced Ultralow Threshold Random Laser in a Single GaTe Flake

Zuxin Chen,Yingjun Zhang,Sheng Chu,Rong Sun,Jun Wang,Jiapeng Chen,Bin Wei,Xin Zhang,Weihang Zhou,Yumeng Shi,Zhongchang Wang
DOI: https://doi.org/10.1021/acsami.0c03419
IF: 9.5
2020-01-01
ACS Applied Materials & Interfaces
Abstract:Random lasing is a lasing phenomenon realized in random media, and it has attracted a great deal of attention in recent years. An essential requirement for strong random lasing is to achieve strong and recurrent scattering among grain boundaries of a disordered structure. Herein, we report a random laser (RL) based on individual polycrystalline GaTe microflakes (MFs) with a lasing threshold of 4.15 kW cm-2, about 1-2 orders of magnitude lower than that of the reported single GaN microwire random laser. The strongly enhanced light scattering and trapping benefit from the reduced grain size in the polycrystalline GaTe MF, resulting in a ultralow threshold. We also investigate the dependence of spatially localized cavities' dimension on the pumping intensity profile and temperature. The findings provide a feasible route to realize RL with a low threshold and small size, opening up a new avenue in fulfilling many potential optoelectronic applications of RL.
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