Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Two-hole "desorption" mechanism of interstitial-vacancy pair generation visualized by avalanche-like color-center yield in synthetic diamond under ultrashort-pulse laser exposure

Productivity of Concentration-Dependent Conversion of Substitutional Nitrogen Atoms into Nitrogen-Vacancy Quantum Emitters in Synthetic-Diamond by Ultrashort Laser Pulses

Direct Multiphoton Femtosecond Infrared Laser Excitation of a Diamond Lattice in the Two-Phonon Region and Modification of Color Centers

Interactions of Atomistic Nitrogen Optical Centers during Bulk Femtosecond Laser Micromarking of Natural Diamond

Intrapulse in situ Raman probing of electron, phonon and structural dynamics in synthetic diamond excited by ultrashort laser pulses: Insights into atomistic structural damage

Hybrid Photoexcitation in Undoped Diamond by Mid-Infrared Femtosecond Laser Pulses

Characterization of Milled High-Pressure High-Temperature NV-Center Nanodiamonds for Single-Photon Source Applications

Optically Coherent Nitrogen-Vacancy Centers in HPHT Treated Diamonds

Localized Nitrogen-Vacancy centers generated by low-repetition rate fs-laser pulses

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Photonic-Cavity-Enhanced Laser Writing of Color Centers in Diamond

Vacancy–impurity centers in diamond: prospects for synthesis and applications

Laser Imaging of Small-Scale Structural Inhomogeneities in CVD Diamond

Effect of Reactive Ion Etching on the Luminescence of GeV Color Centers in CVD Diamond Nanocrystals

Deep Diamond Single-Photon Sources Prepared by a Femtosecond Laser.

CVD-growth of ultra-pure diamond, generation of NV centers by ion-implantation and their spectroscopic characterization for quantum technological applications

Photoactivation of color centers induced by laser irradiation in ion-implanted diamond

Creation of NV centers in diamond under 155 MeV electron irradiation

Superradiance from Nitrogen Vacancy Centers Coupled to An Ultranarrow Optical Cavity

Optical and spin properties of nitrogen vacancy centers formed along the tracks of high energy heavy ions

Single Silicon Vacancy Centers in 10-Nanometer Diamonds for Quantum Information Applications