Abstract:Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a ferromagnetic/ferroelectric heterostructures, the strain mediated coupling exploits piezoelectricity/electrostriction in ferroelectric phase and magnetostriction/piezomagnetism in ferromagnetic phase. Such verity of these combined effect can be manipulated by an external perturbation, such as electric field, temperature or magnetic field. Here, we demonstrate the remote-controlled tunability of these effects under the visible, coherent and polarized light. The combined surface and bulk magnetic study of domain-correlated Ni/BaTiO3 heterostructure reveals that the system is strong sensitive about the light illumination via the combined effect of converse piezoelectric, magnetoelastic coupling and converse magnetostriction. Well-defined ferroelastic domain structure is fully transferred from a tetragonal ferroelectric to magnetostrictive layer via interface strain transfer during the film growth. The visible light illumination is used to manipulate the original ferromagnetic microstructure by the light-induced domain wall motion in ferroelectric, consequently the domain wall motion in the ferromagnetic layer. Our findings mimic the attractive remote-controlled ferroelectric random-access memory write and magnetic random-access memory read application scenarios, hence, can be proven as a novel perspective for room temperature device applications.

Light modulation of magnetization switching in PMN-PT/Ni heterostructure

Modulation of spin dynamics in Ni/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructure

Light-Controlled Magnetoelastic Effects in Ni/BaTiO3 Heterostructures

Light-induced giant and persistent changes in the converse magnetoelastic effects in Ni/BaTiO3 multiferroic heterostructure

Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

Effects of electric field and light on resistivity switching for Eu0.7Sr0.3MnO3 thin films

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

Nonvolatile manipulation of electronic and ferromagnetic properties of NiO–Ni epitaxial film by ferroelectric polarization charge

Electric-Field Modulation of Interface Magnetic Anisotropy and Spin Reorientation Transition in (Co/Pt) 3 /PMN-PT Heterostructure.

Magnetically Correlated Anisotropic Resistive Switching Manipulated by Electric Field in Co/PMN-PT Heterostructures

Electric Field Manipulation of Nonvolatile Magnetization in Au/NiO/Pt Heterostructure with Resistive Switching Effect

Electric field control of magnetism through modulating phase separation in (011)-Nd 0.5 Sr 0.5 MnO 3 /PMN-PT heterostructures

Electric Field Mediated Non-Volatile Tuning Magnetism in CoPt/PMN-PT Heterostructure for Magnetoelectric Memory Devices

Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/pt)(3)/pb(mg1/3nb2/3)o-3-pbtio3 Multiferroic Heterostructures

Large reversible electric-voltage manipulation of magnetism in NiFe/BaTiO<sub>3</sub>heterostructures at room temperature

Nonvolatile Control of Transport and Magnetic Properties in Magnetoelectric Heterostructures by Electric Field

Multilevel nonvolatile regulation of magnetism by electric field in amorphous hard magnetic SmCo/PMN-PT(011) heterostructure

Giant Electrical Modulation of Magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011) Heterostructure.

Electric-Field-Assisted Magnetization Switching in Fepd/Pb(Mg1/3nb2/3)O-3-Pbtio3 Heterostructure at Room Temperature

FAST TRACK COMMUNICATION: Large reversible electric-voltage manipulation of magnetism in NiFe/BaTiO3 heterostructures at room temperature

Light modulated magnetism and spin–orbit torque in a heavy metal/ferromagnet heterostructure based on van der Waals-layered ferroelectric materials