Abstract:In this study, a two-electrode electrodeposition technique was employed to grow thin films of antimony selenide (Sb2Se3) on glass/fluorine-doped tin oxide (FTO) substrates. The highest quality thin films were consistently obtained within the range of 1600 mV to 1950 mV. Subsequent electrodeposition experiments were conducted at discrete voltages to produce various layers of thin films. Photoelectrochemical cell (PEC) measurements were performed to characterize the semiconductor material layers, leading to the identification of both p-Type and n-Type conductivity types. Optical absorption spectroscopic analysis revealed energy bandgap values ranging from 1.10 eV to 1.90 eV for AD-deposited Sb2Se3 samples and 1.08 eV to 1.68 eV for heat-treated Sb2Se3 samples, confirming the semiconducting nature of the Sb2Se3 material. Additionally, other characterization techniques, including X-ray diffraction analysis, reveal that the AD-deposited layers are almost amorphous, and heat treatment shows that the material is within the orthorhombic crystalline system. Heat-treated layers grown at ~1740 mV showed highly crystalline material with a bandgap nearing the bulk bandgap of Sb2Se3. Raman spectroscopy identified vibrational modes specific to the Sb2Se3 phase, further confirming its crystallinity. To explore the thin-film morphology, Scanning Electron Microscopy (SEM) was employed, revealing uniformly deposited material composed of grains of varying sizes at different voltages. Energy Dispersive X-ray analysis (EDX) confirmed the presence of antimony and selenium in the material layers.

Photoresponse Investigation of Polycrystalline Gallium Antimonide (gasb) Thin Films

Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets.

Photoresponse in sequentially stacked antimony selenide thin films

Tuning Ultrafast Carrier Dynamics and Broadband Photo-Response of High-Performance Sb 2 Se 3 Thin Film Photodetectors: A Substrate Dependent Study

Ga/GaSb nanostructures: Solution-phase growth for high-performance infrared photodetection

The Structural And Photoelectrical Properties Of Gallium Oxide Thin Film Grown By Radio Frequency Magnetron Sputtering

Ellipsometry Study of Optical Properties and Dielectric Response of SnS2 and GaS Crystals

Photoresponse of large-area atomically thin β-Ga 2 O 3 and GaN materials via liquid metal print synthesized

Enhanced Photoresponse of High Crystalline Bi2Se3 Thin-Films Using Patterned Substrates

Polycrystalline Ga 2 O 3 Nanostructure-Based Thin Films for Fast-Response Solar-Blind Photodetectors

Optimization of Growth Temperature of β-Ga₂O₃ Thin Films for Solar-Blind Photodetectors

Sensitive Direct Converting Thin Film X-Ray Detector Utilizing Β-Ga2o3 Fabricated Via MOCVD

Tuning the crystalline orientation of quasi 1D anisotropic Sb 2 Se 3 as a function of growth temperature for thin film photovoltaic applications

Single-GaSb-nanowire-based Room Temperature Photodetectors with Broad Spectral Response

Growth and Characterization of p-Type and n-Type Sb2Se3 for Use in Thin-Film Photovoltaic Solar Cell Devices

Sensitive solution-processed Bi2S3 nanocrystalline photodetectors

Self-powered and broadband flexible photodetectors based on vapor deposition grown antimony film

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGa2O4 Films

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire.

Optoelectronic characterization of CuInGa(S)2 thin films grown by spray pyrolysis for photovoltaic application