Electrical control of the valley Hall effect in bilayer MoS2 transistors

Jieun Lee,Kin Fai Mak,Jie Shan

DOI: https://doi.org/10.1038/nnano.2015.337

IF: 38.3

2016-01-25

Nature Nanotechnology

Abstract:The valley Hall effect in bilayer MoS2 transistors can be controlled using a gate voltage and the induced valley polarization imaged with Kerr microscopy.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

Valleytronics. The valley Hall effect in MoS₂ transistors

K F Mak,K L McGill,J Park,P L McEuen

DOI: https://doi.org/10.1126/science.1250140

IF: 56.9

2014-06-27

Science

Abstract:Electrons in two-dimensional crystals with a honeycomb lattice structure possess a valley degree of freedom (DOF) in addition to charge and spin. These systems are predicted to exhibit an anomalous Hall effect whose sign depends on the valley index. Here, we report the observation of this so-called valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated with circularly polarized light, which preferentially excites electrons into a specific valley, causing a finite anomalous Hall voltage whose sign is controlled by the helicity of the light. No anomalous Hall effect is observed in bilayer devices, which have crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.
The Valley Hall Effect in MoS2 Transistors

Kin Fai Mak,Kathryn L. McGill,Jiwoong Park,Paul L. McEuen

DOI: https://doi.org/10.48550/arXiv.1403.5039

2014-03-20

Mesoscale and Nanoscale Physics

Abstract:Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose sign depends on the valley index, but to date this effect has not been observed. Here we report the first observation of this new valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated by circularly polarized light which preferentially excites electrons into a specific valley, and a finite anomalous Hall voltage is observed whose sign is controlled by the helicity of the light. Its magnitude is consistent with theoretical predictions of the VHE, and no anomalous Hall effect is observed in bilayer devices due to the restoration of crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.
Valley magnetoelectricity in single-layer MoS2

Jieun Lee,Zefang Wang,Hongchao Xie,Kin Fai Mak,Jie Shan

DOI: https://doi.org/10.1038/nmat4931

Abstract:The magnetoelectric (ME) effect, the phenomenon of inducing magnetization by application of an electric field or vice versa, holds great promise for magnetic sensing and switching applications. Studies of the ME effect have so far focused on the control of the electron spin degree of freedom (DOF) in materials such as multiferroics and conventional semiconductors. Here, we report a new form of the ME effect based on the valley DOF in two-dimensional Dirac materials. By breaking the three-fold rotational symmetry in single-layer MoS 2 via a uniaxial stress, we have demonstrated the pure electrical generation of valley magnetization in this material, and its direct imaging by Kerr rotation microscopy. The observed out-of-plane magnetization is independent of in-plane magnetic field, linearly proportional to the in-plane current density, and optimized when the current is orthogonal to the strain-induced piezoelectric field. These results are fully consistent with a theoretical model of valley magnetoelectricity driven by Berry curvature effects. Furthermore, the effect persists at room temperature, opening possibilities for practical valleytronic devices.
Photoinduced valley-polarized current of layered MoS2 by electric tuning

Yunjin Yu,Yanfeng Zhou,Langhui Wan,Bin Wang,Fuming Xu,Yadong Wei,Jian Wang

DOI: https://doi.org/10.48550/arXiv.1701.01520

2017-01-06

Mesoscale and Nanoscale Physics

Abstract:A photoinduced current of a layered MoS2-based transistor is studied from first-principles. Under the illumination of circular polarized light, a valley-polarized current is generated, which can be tuned by the gate voltage. For monolayer MoS2, the valley-polarized spin-up (down) electron current at K (K') points is induced by the right (left) circular polarized light. The valley polarization is found to reach +1.0 (-1.0) for the valley current that carried such a K (K') index. For bilayer MoS2, the spin-up (down) current can be induced at both K and K' valleys by the right (left) circular light. In contrast to monolayer MoS2, the photoinduced valley polarization shows asymmetric behavior upon reversal of the gate voltage. Our results show that the valley polarization of the photoinduced current can be modulated by the circular polarized light and the gate voltage. All the results can be well understood using a simple kp model.
Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Wen-Yi Tong,Chun-Gang Duan

DOI: https://doi.org/10.1038/s41535-017-0051-6

IF: 6.856

2017-08-24

npj Quantum Materials

Abstract:In analogy to all-electric spintronics, all-electric valleytronics, i.e., valley manipulation via electric means, becomes an exciting new frontier as it may bring revolutions in the field of data storage with ultra-high speed and ultra-low power consumption. The existence of the anomalous valley Hall effect in ferrovalley materials demonstrates the possibility of electrical detection for valley polarization. However, in previously proposed valley-polarized monolayers, the anomalous valley Hall effect is controlled by external magnetic fields. Here, through elaborate structural design, we propose the antiferrovally bilayer as an ideal candidate for realizing all-electric valleytronic devices. Using the minimal k·p model, we show that the energy degeneracy between valley indexes in such system can be lifted by electric approaches. Subsequently, the anomalous valley Hall effect strongly depends on the electric field as well. Taking the bilayer VSe2 as an example, all-electric tuning and detecting of anomalous valley Hall effect is confirmed by density-functional theory calculations, indicating that the valley information in such antiferrovalley bilayer can be reversed by an electric field perpendicular to the plane of the system and easily probed through the sign of the Hall voltage.

materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology
Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Yanchong Zhao,Luojun Du,Shiqi Yang,Jinpeng Tian,Xiaomei Li,Cheng Shen,Jian Tang,Yanbang Chu,Kenji Watanabe,Takashi Taniguchi,Rong Yang,Dongxia Shi,Zhipei Sun,Yu Ye,Wei Yang,Guangyu Zhang

DOI: https://doi.org/10.48550/arXiv.2106.00351

2021-06-01

Mesoscale and Nanoscale Physics

Abstract:Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer excitons in pristine bilayer MoS2, which lies at the heart of valleytronics, has remained elusive. Here we report the observation of highly circularly polarized photoluminescence from interlayer excitons of bilayer MoS2 with both optical and magnetic addressability. Under excitation of circularly polarized light near exciton resonance, interlayer excitons of bilayer MoS2 show a near-unity, but negative circular polarization. Significantly, by breaking time-reversal symmetry with an out-of-plane magnetic field, a record level of spontaneous valley polarization (7.7%/Tesla) is identified for interlayer excitons in bilayer MoS2. The giant valley polarization of the interlayer excitons in bilayer MoS2, together with the feasibility of electrical/optical/magnetic control and strong oscillator strength, provides a firm basis for the development of next-generation electronic and optoelectronic applications.
A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

Chongyun Jiang,Abdullah Rasmita,Hui Ma,Qinghai Tan,Zhaowei Zhang,Zumeng Huang,Shen Lai,Naizhou Wang,Sheng Liu,Xue Liu,Ting Yu,Qihua Xiong,Wei-bo Gao

DOI: https://doi.org/10.1038/s41928-021-00686-7

IF: 33.255

2021-12-16

Nature Electronics

Abstract:Two-dimensional semiconductors have a valley degree of freedom that could be used as a platform for future optoelectronic devices. The valley Hall effect, caused by electrons in different valleys having opposite Berry curvatures, is important for making such devices, but has only been reported with plasmonic structures or at cryogenic temperatures, limiting practical application. Here we report the observation of the valley Hall effect at room temperature in a molybdenum disulfide/tungsten diselenide van der Waals heterostructure. We show that the magnitude and polarity of the valley Hall effect in the heterostructure are gate tunable, which can be attributed to the contribution of the opposite valley Hall effect from electrons and holes in different layers. We use this gate tunability to create a bipolar valleytronic transistor.

engineering, electrical & electronic
Electrical Switching of Valley Polarization in Monolayer Semiconductors

Lizhong Li,Shengwei Jiang,Zefang Wang,Kenji Watanabe,Takashi Taniguchi,Jie Shan,Kin Fai Mak

DOI: https://doi.org/10.1103/physrevmaterials.4.104005

2019-01-01

Abstract:Achieving on-demand control of the valley degree of freedom is essential for valley-based information science and technology. Optical and magnetic control of the valley degree of freedom in monolayer transition-metal dichalcogenide (TMD) semiconductors has been studied extensively. However, electrical control of the valley polarization has remained a challenge. Here we demonstrate switching of the valley polarization in monolayer WSe2 by electrical gating. This is achieved by coupling a WSe2 monolayer to a two-dimensional (2D) layered magnetic insulator CrI3. The valley degeneracy in WSe2 is lifted by the magnetic proximity effect. The valley polarization is switched through gate control of the interlayer spin-flip transition in 2D CrI3, which switches the magnetization of the CrI3 layer adjacent to the WSe2 layer. The effect is manifested by a sign change in the photoluminescence handedness of WSe2. Our results provide the basis for high-speed and energy-efficient gate control of the valley degree of freedom in monolayer TMD semiconductors.
MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Ting Cao,Ji Feng,Junren Shi,Qian Niu,Enge Wang

DOI: https://doi.org/10.48550/arXiv.1112.4013

2011-12-17

Materials Science

Abstract:A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this emergent degree of freedom of charge carriers, in what is termed "valleytronics", if charge carrier imbalance between the valleys can be achieved. The physics of valley polarization will make possible electronic devices such as valley filter and valley valve, and optoelectronic Hall devices, all very promising for next-generation electronic and optoelectronic applications. The key challenge lies with achieving valley imbalance, of which a convincing demonstration in a two-dimensional honeycomb structure remains evasive, while there are only a handful of examples for other materials. We show here, using first principles calculations, that monolayer MoS_2, a novel two-dimensional semiconductor with a 1.8 eV direct band gap, is an ideal material for valleytronics by valley- selective circular dichroism, with ensuing valley polarization and valley Hall effect.
Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Fang Li,Hui Zhang,You Li,Yibin Zhao,Mingyan Liu,Yunwei Yang,Jiamin Yao,Shaolong Min,Erjun Kan,Yi Wan

DOI: https://doi.org/10.3390/nano13050861

IF: 5.3

2023-02-25

Nanomaterials

Abstract:Layered transition metal dichalcogenides (TMDs) provide a favorable research platform for the advancement of spintronics and valleytronics because of their unique spin-valley coupling effect, which is attributed to the absence of inversion symmetry coupled with the presence of time-reversal symmetry. To maneuver the valley pseudospin efficiently is of great importance for the fabrication of conceptual devices in microelectronics. Here, we propose a straightforward way to modulate valley pseudospin with interface engineering. An underlying negative correlation between the quantum yield of photoluminescence and the degree of valley polarization was discovered. Enhanced luminous intensities were observed in the MoS2/hBN heterostructure but with a low value of valley polarization, which was in stark contrast to those observed in the MoS2/SiO2 heterostructure. Based on the steady-state and time-resolved optical measurements, we reveal the correlation between exciton lifetime, luminous efficiency, and valley polarization. Our results emphasize the significance of interface engineering for tailoring valley pseudospin in two-dimensional systems and probably advance the progression of the conceptual devices based on TMDs in spintronics and valleytronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect

Yaqing Yang,Xiaoyu Cheng,Liantuan Xiao,Suotang Jia,Jun Chen,Lei Zhang,Jian Wang

DOI: https://doi.org/10.1103/PhysRevB.109.235403

2024-06-14

Abstract:Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can switch the fully valley-polarized photocurrent between K and K' valleys using the circular bulk electro-photovoltaic effect. This is accomplished by applying an out-of-plane electric field to the two-dimensional valley materials, which enables continuous tuning of the Berry curvature and its sign flip. We found that the switch of the fully valley-polarized photocurrent is directly tied to the sign change of Berry curvature, which accompanies a topological phase transition, for instance, the quantum spin Hall effect and the quantum valley Hall effect. This scheme has been confirmed in monolayer BiAsI2 and germanene through first-principles calculations. Our paper offers a promising strategy for the development of a volatile valley-addressable memory device and could inspire further research in this area.

Mesoscale and Nanoscale Physics
Imaging the valley and orbital Hall effect in monolayer MoS2

Fei Xue,V. P. Amin,P. M. Haney

DOI: https://doi.org/10.48550/arXiv.2002.11772

2020-02-26

Mesoscale and Nanoscale Physics

Abstract:The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. In this paper we identify a previously unrecognized consequence of Berry curvature in these materials: an electric field-induced change in the electrons' charge density orientation. We use first principles calculations to show that measurements of the electric field-induced change in the charge density or local density of states in MoS$_2$ can be used to measure its energy-dependent valley and orbital Hall conductivity.
Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Simrjit Singh,Kwan-Ho Kim,Kiyoung Jo,Pariasadat Musavigharavi,Bumho Kim,Jeffrey Zheng,Nicholas Trainor,Chen Chen,Joan M. Redwing,Eric A Stach,Roy H Olsson III,Deep Jariwala

2023-11-15

Abstract:Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices.

Mesoscale and Nanoscale Physics,Applied Physics
Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Jianbo Yin,Cheng Tan,David Barcons-Ruiz,Iacopo Torre,Kenji Watanabe,Takashi Taniguchi,Justin C W Song,James Hone,Frank H L Koppens,Justin C. W. Song,Frank H. L. Koppens

DOI: https://doi.org/10.1126/science.abl4266

IF: 56.9

2022-03-25

Science

Abstract:Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with nontrivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized midinfrared light, and confirm that the observed Hall voltage arises from an optically induced valley population. Compared with molybdenum disulfide (MoS 2 ), we find orders of magnitude larger VSHE, attributed to the inverse scaling of the Berry curvature with bandgap. By monitoring the valley-selective Hall conductivity, we study the Berry curvature’s evolution with bandgap. This in situ manipulation of VSHE paves the way for topological and quantum geometric optoelectronic devices, such as more robust switches and detectors.

multidisciplinary sciences
Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Ao Zhang,Kaike Yang,Yun Zhang,Anlian Pan,Mingxing Chen

DOI: https://doi.org/10.1103/physrevb.104.l201403

IF: 3.7

2021-11-10

Physical Review B

Abstract:Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and valve devices through band engineering. Instead of the magnetic proximity effect that has been extensively used in previous studies, in our strategy, the electron valleys are directly coupled to the spin-polarized states of two-dimensional ferromagnets. We find that this coupling results in a valley-selective gap opening due to the spin-momentum locking in the transition-metal dichalcogenide monolayers. This physics gives rise to a variety of unexpected electronic properties and phenomena including half-metallicity, electrically switchable valley polarization, spin/valley filter, and valve effects in the transition-metal dichalcogenide monolayers. We further demonstrate our idea in MoTe2/CoCl2 and CoCl2/MoTe2/CoCl2 van der Waals heterojunctions based on first-principles calculations. Thus, our study provides a way of engineering the electron valleys in transition-metal dichalcogenide monolayers for contemporary devices.

physics, condensed matter, applied,materials science, multidisciplinary
Enhanced Spin Polarization and Valley Polarization in Monolayer MoS2 Junctions.

R-Y Yuan,Q-J Yang,Y. Guo

DOI: https://doi.org/10.1088/1361-648x/aad4bd

2018-01-01

Journal of Physics Condensed Matter

Abstract:Special resonant modes in unique quantum structure can enhance spin and valley filtering effect. Hence we investigated resonant tunneling effect with large incident angles through single electric barrier in monolayer MoS2 junctions consisting of normal/ferromagnetic/normal parts. We found that for large incident angles the spin- and valley-dependent line-type resonances appear in the transmission and conductance spectra, which results in the transmission probabilities of spin-up and spin-down electrons at K and valleys being all improved to 100 but for different special gate voltage. Therefore, both the spin and valley polarizations are increased, the perfect 100 spin and valley polarizations are observed. Furthermore, the numbers of the line-type resonant peaks are multiplied with the increasing of the barrier’s width. And the spin- and valley-polarized direction can be switched by changing the gate voltage. These intriguing features indicate that a valley or spin filter with high accuracy and efficiency can be designed, which is controllable by the electric field.
Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation

Min‐kyung Jo,Eunji Lee,Eoram Moon,Bo Gyu Jang,Jeongtae Kim,Krishna Prasad Dhakal,Saeyoung Oh,Seong Rae Cho,Nurul Hasanah,Seungmo Yang,Hu Young Jeong,Jeongyong Kim,Kibum Kang,Seungwoo Song

DOI: https://doi.org/10.1002/adma.202407997

IF: 29.4

2024-10-08

Advanced Materials

Abstract:The study demonstrates highly electron‐doped multi‐monolayer 2H‐MoS2 through planar organic ion intercalation (1‐ethyl‐3‐methylimidazolium, EMIM+), maintaining a direct bandgap with high photoluminescence intensity, and stable valley polarization up to room temperature for future applications of valleytronics and spintronics. Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin‐orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin‐valley locking in K or K' valleys, the ultra‐short valley lifetime limits their room‐temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybdenum disulfide (MoS2) can maintain 1) a structure with broken inversion symmetry and strong spin‐orbit coupling, 2) a direct bandgap with high photoluminescence (PL) intensity, and 3) stable valley polarization up to room temperature. Through the intercalation of organic 1‐ethyl‐3‐methylimidazolium (EMIM+) ions, multilayer MoS2 not only exhibits layer decoupling but also benefits from an electron doping effect. This results in a hundredfold increase in PL intensity and stable valley polarization, achieving 55% and 16% degrees of valley polarization at 3 K and room temperature, respectively. The persistent valley polarization at room temperature, due to interlayer decoupling and trion dominance facilitated by a gate‐free method, opens up potential applications in valley‐selective optoelectronics and valley transistors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection

Xukun Feng,Chit Siong Lau,Shi-Jun Liang,Ching Hua Lee,Shengyuan A. Yang,Yee Sin Ang

2023-08-09

Abstract:Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here we generalize the concept of metal/semiconductor (MS) contact into the realm of valleytronics. We propose a half-valley Ohmic contact based on FVSC/graphene heterostructure where the two valleys of FVSC separately forms Ohmic and Schottky contacts with those of graphene, thus allowing current to be valley-selectively injected through the `Ohmic' valley while being blocked in the `Schottky' valley. We develop a theory of contact-limited valley-contrasting current injection and demonstrate that such transport mechanism can produce gate-tunable valley-polarized injection current. Using RuCl$_2$/graphene heterostructure as an example, we illustrate a device concept of valleytronic barristor where high valley polarization efficiency and sizable current on/off ratio, can be achieved under experimentally feasible electrostatic gating conditions. These findings uncover contact-limited valley-contrasting current injection as an efficient mechanism for valley polarization manipulation, and reveals the potential of valleytronic MS contact as a functional building block of valleytronic device technology.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures

Jarosław Pawłowski,John Eric Tiessen,Rockwell Dax,Junxia Shi

2024-08-19

Abstract:We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable) overlapping with the junction is significant and pumping frequency tuned. The pumping scheme that induces transitions is all-electrical: obtained by applying oscillating voltages to control gates and thus enables for scalable qubit architectures. We also report another possibility of valley-qubit manipulation by accumulating non-Abelian valley Berry phase. To model nanodevice we solve the time-dependent Schrödinger-Poisson equations in a tight-binding approach and obtain exact time-evolution of the valley-qubit system.

Mesoscale and Nanoscale Physics
Gate-field control of valley polarization in valleytronics

Ting-Ting Zhang,Yilin Han,Run-Wu Zhang,Zhi-Ming Yu

DOI: https://doi.org/10.1088/1674-1056/ad401a

2024-04-20

Chinese Physics B

Abstract:Valleytronics materials are a kind of special semiconductors, which can host multiple symmetryconnected and well-separated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped. Since the low-energy particles residing in these pockets generally are not easily scattered to each other by small perturbations, they are endowed with an additional valley degree of freedom. Analogous to spin, the valley freedom can be used to process information, leading to the concept of valleytronics. The prerequisite for valleytronics is the generation of valley polarization. Thus, a focus in this field is achieving electric generation of valley polarization, especially the static generation by the gate electric field alone. In this work, we briefly review the latest progress in this research direction, focusing on the concepts of the couplings between valley and layer, i.e. the valley-layer coupling which permits the gate-field control of the valley polarization, the couplings between valley, layer, and spin in magnetic systems, the physical properties, the novel designing schemes for electronics devices, and the material realizations of the gate-controlled valleytronics materials.

physics, multidisciplinary

Electrical control of the valley Hall effect in bilayer MoS2 transistors

Valleytronics. The valley Hall effect in MoS₂ transistors

The Valley Hall Effect in MoS2 Transistors

Valley magnetoelectricity in single-layer MoS2

Photoinduced valley-polarized current of layered MoS2 by electric tuning

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

Electrical Switching of Valley Polarization in Monolayer Semiconductors

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect

Imaging the valley and orbital Hall effect in monolayer MoS2

Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Enhanced Spin Polarization and Valley Polarization in Monolayer MoS2 Junctions.

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation

Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection

Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures

Gate-field control of valley polarization in valleytronics