Abstract:As feature size shrinks to 10 nm node and below, cobalt (Co) has been considered as one of the most promising replacements for both diffusion barrier layers as well as the copper conductive layer of interconnects. The cleaning process of Co films after chemical mechanical planarization (CMP) is vital to ensure the interconnection devices' yields and functionalities. This paper presents a study of non-contact megasonic cleaning approach for post-CMP cleaning of Co films. The research focuses on post-CMP megasonic cleaning with and without chem-istry to assess the effect of physical and chemical cleaning of Co films. We evaluate the effect of citric acid on the nanoparticle removal efficiency for Co films assisted with megasonic acoustic streaming. In terms of mechanical megasonic action, the acoustic streaming flow reduces the boundary layer thickness to less than one micron above the surface of the wafer, and that allows a high velocity within less than a micron boundary layer thickness applied the particles on the surface of the wafer. In chemical respect, the nanoparticle removal from Co surfaces can be attributed to the undercutting effect accelerated by complexation at low pH values, whereas the adsorption of citrate ions on Co oxide layers plays a critical role in alkaline regions. Moreover, the effects of megasonic parameters, including cleaning pressure amplitude (power), substrate exposure time, and cleaning tank flow rate on the nanoparticle removal efficiency have been investigated. The results show that the maximum cleaning efficiency of Co films with deionized water only yields 52.7% removal efficiency utilizing 66% power, 87 s cleaning time, and 1.1 GPM (gallons per minute) flow rate. When citric acid is utilized, a cleaning efficiency of similar to 99% or higher can be reached with 100% power, 59 s cleaning time, and 5 mM citric acid at pH 11. This demonstrates that both a cleaning chemistry and a physical cleaning force are both needed to achieve an effective post-CMP cleaning for Co films.

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