Abstract:Functional Materials Letters, Ahead of Print. In our study, we successfully demonstrated bipolar resistive switching in Resistive Random-Access Memory (RRAM) devices using MAPbI[math][math]Cl[math] mixed halide perovskite, thereby underscoring the immense potential of this material for future memory applications. By incorporating polyvinylpyrrolidone (PVP) into the device structure, which consists of MAPbI[math][math]Cl[math] sandwiched between top (Au) and bottom (ITO) electrodes, we achieved a remarkable morphological transition from elongated, needle-like structures to denser, more compact forms. This morphological evolution was pivotal in significantly lowering operational voltages, with "SET" and "RESET" voltages dramatically reduced from 7 V to 0.7 V and -2.2 V to -0.2 V, respectively. The incorporation of PVP proved to be a key factor in this achievement, as it enhanced charge transport within the device, minimized energy barriers, and markedly improved the dielectric properties of the perovskite material. These enhancements contributed directly to the observed reduction in switching voltages, marking a substantial leap forward in the quest for more efficient, stable, and low-power RRAM devices. Our research not only advances the field of memory technology but also emphasizes the critical aspects of reduced power consumption and the potential for enhanced device stability. This significant decrease in energy requirements, coupled with the prospect of increased device longevity, underscores the transformative impact of our findings, paving the way for the development of sustainable and reliable memory technologies that are well-suited to meet the demands of future electronic devices and systems.

Improved Performance of CH3NH3PbI3-xClx Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures

Three-Dimensional/Two-Dimensional Perovskite-Resistive Random-Access Memory with Low SET Voltage and High Stability

Pseudohalide-Induced 2D (ch3nh3)(2)pbi2(scn)(2) Perovskite for Ternary Resistive Memory with High Performance

Resistive Switching Behavior of Organic-Metallic Halide Perovskites CH3NH3Pb1−Bi Br3

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

Enhanced Resistive Switching Performance In Yttrium-Doped Ch3nh3pbi3 Perovskite Devices

Two-Dimensional (c6h5c2h4nh3)2pbi4 Perovskite Single Crystal Resistive Switching Memory Devices

Simultaneously Elevating the Resistive Switching Level and Ambient-Air-stability of 3D Perovskite (Taz-H)pbbr3-based Memory Device by Encapsulating into Polyvinylpyrrolidone.

Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio.

Bipolar resistive switching in MAPbI[math]Cl[math] mixed halide perovskite with polyvinylpyrrolidone additives

High-Performance Resistive Random Access Memories Based on Two-Dimensional HAPbI4 Organic-Inorganic Hybrid Perovskite

Resistive Switching Memory Devices Based on All-inorganic Perovskite CsPbBr3 Quantum Dot

Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure

Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory

Lead-free CsCu<sub>2</sub>Br<sub>3</sub> perovskite for multilevel resistive switching memory

Strongly stable resistive random access memory based on quasi-two-dimensional perovskites

Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures

Lead-free CsCu2Br3 perovskite for multilevel resistive switching memory

Optically Tunable Ultra-Fast Resistive Switching in Lead-Free Methyl-Ammonium Bismuth Iodide Perovskite Films.

Low-Dimensional Lead-Free Inorganic Perovskites for Resistive Switching with Ultralow Bias

Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1- Xbi Xi3 Perovskite-Based Memory Device.