Abstract:Fluorinated ligand capped quantum dots are first demonstrated as interface engineering layer for efficient and stable 0D/3D perovskite solar cells, a champion efficiency of 23.42% is obtained together with enhanced ambient storage stability due to reduced trap state density as well as enhanced resistance of moisture. Dimensionality engineering involving the low‐dimensional and 3D perovskites has been demonstrated as an efficient promising strategy to modulate interfacial energy loss as well as instability in perovskite solar cells (PSCs). Herein, the use of fluorinated Cesium Lead Iodide (CsPbI3) perovskite quantum dot (PQD) is first reported as interface modification layer for PSCs. The binding between the CsPbI3 PQD surface and native oleic acid (OLA)/oleylamine (OAm) ligands is governed by a dynamic adsorption–desorption equilibrium. Perfluorooctanoic acid (PFA) with stronger binding affinity and more hydrophobic nature is explored to partially replace OLA to prepare the fluorinated ligand capped CsPbI3 PQDs (F‐CsPbI3). Through optimization of the addition of PFA during hot‐injection synthesis, the in situ treated F‐CsPbI3 PQDs display reduced surface defect states, higher photoluminescence quantum yields together with improved stability. Subsequently, both CsPbI3 and F‐CsPbI3 PQDs are utilized as interface engineering layer in PSCs, delivering the best efficiency values of 21.99% and 23.42%, respectively, which is significantly enhanced compared to the control device (20.37%). More importantly, benefiting from its more hydrophobic properties, the F‐CsPbI3 PQD treated device exhibits excellent ambient storage stability (25 °C, relative humidity: 35–45%), retaining over 80% of its initial efficiency after 1500 h aging.

Hybrid CdSe/CsPbI3 quantum dots for interface engineering in perovskite solar cells

Perovskite bridging PbS quantum dot/polymer interface enables efficient solar cells

Double‐Layer Quantum Dots As Interfacial Layer to Enhance the Performance of CsPbI3 Solar Cells

Efficiency and stability enhancement of perovskite solar cells by introducing CsPbI3 quantum dots as an interface engineering layer

Enhancing Perovskite Solar Cell Performance by Interface Engineering Using CH3NH3PbBr0.9I2.1 Quantum Dots.

Bidentate Ligand Modified CsPbI2Br Quantum Dots As an Interface for High-Performance Carbon-Based Perovskite Solar Cells

Effects of CsSnxPb1−xI3 Quantum Dots as Interfacial Layer on Photovoltaic Performance of Carbon-Based Perovskite Solar Cells

Enhanced efficiency of perovskite solar cells by PbS quantum dot modification

Hybrid PbS Quantum-Dot-in-Perovskite for High-Efficiency Perovskite Solar Cell.

Interfacial Heterojunction Enables High Efficient PbS Quantum Dot Solar Cells

Ch3nh3pbbr3-Xix Quantum Dots Enhance Bulk Crystallization And Interface Charge Transfer For Efficient And Stable Perovskite Solar Cells

Application of quantum dots in perovskite solar cells

Planar Perovskite Solar Cells Using Perovskite CsPbI3 Quantum Dots as Efficient Hole Transporting Layers

High Efficiency Mesoscopic Solar Cells Using CsPbI3 Perovskite Quantum Dots Enabled by Chemical Interface Engineering

High Efficiency Mesoscopic Solar Cells Using CsPbI3 Perovskite Quantum Dots Enabled by Chemical Interface Engineering.

Quantum Dot Interface-Mediated CsPbIBr 2 Film Growth and Passivation for Efficient Carbon-Based Solar Cells

Design and Synthesis of Fluorinated Quantum Dots for Efficient and Stable 0D/3D Perovskite Solar Cells

Enhanced Performance of Perovskite Solar Cells Loaded with Iodine-Rich CsPbI3 Quantum Dots

Buried interface engineering enables efficient and refurbished CsPbI3 perovskite quantum dot solar cells

Application of Quantum Dot Interface Modification Layer in Perovskite Solar Cells: Progress and Perspectives.

CsPbIBr2 Quantum Dots As an Interface Layer to Modify Perovskite CsPbIBr2 Films to Improve the Function of Solar Cells