Abstract:By virtue of the layer-dependent band structure and valley-selected optical/electronic properties, atomically layered transition-metal dichalcogenides (TMDs) exhibit great potentials such as in valleytronics and quantum devices, and have captured significant attentions. Precise control of the optical and electrical properties of TMDs is always the pursuing goal for real applications, and constructing advanced structures that allow playing with more degrees of freedom may hold the key. Here, we introduce a triangular inkslab-like WSe2 homojunction with a monolayer in the inner surrounded by a multilayer frame. Benefit from this interesting structure, the photoluminescence (PL) peaks redshift up to 50 meV and the charge density increases about 6 times from the center to the edge region of the inner monolayer. We demonstrated that the Se-deficient multilayer frame offers the excessive free electrons for the generation of the electron density gradient inside the monolayer, which also results in the spatial variation and distribution gradient of a series of exciton complexes. Furthermore, we observed the strong rectifying characteristic and clear photovoltaic response across the homojunction through measuring and mapping the photocurrent of the devices. Our result provides another route for efficient modulation of the exciton-complex emissions of TMDs, which is exceptionally desirable for the "layer- and charge-engineered" photonic and optoelectronic devices.

Nonlayered CdSe Flakes Homojunctions

Synergistic Effect of Hybrid CdSe Nanobelt/PbI2 Flake Heterojunction Toward Drastic Performance Flexible Photodetectors.

Fast Fabrication of WS<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructures for High-Performance Photodetection

Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection

Interface-Induced WSe 2 In-plane Homojunction for High-Performance Photodetection

Self‐Limited Epitaxial Growth of Ultrathin Nonlayered CdS Flakes for High‐Performance Photodetectors

Lateral Heterojunctions Within Monolayer Semiconductors

Solid-State Reaction Synthesis of a InSe/CuInSe 2 Lateral p–n Heterojunction and Application in High Performance Optoelectronic Devices

Properties at the interface of the pristine CdSe and core-shell CdSe-ZnS quantum dots with ultrathin monolayers of two-dimensional MX2 (M: Mo, W; X: S, Se, Te) heterostructures from density functional theory

Ultra-high photo responsivity and self-powered photodetector in broad spectral range based on non-layered MnSe/WSe2 heterojunction

Designing novel monolayer and multilayer h-CSe crystals with tunable photoelectric properties

Few-layer WSe 2 Lateral Homo-and Hetero-Junctions with Superior Optoelectronic Performance by Laser Manufacturing

A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe 2 -WSe 2 Homojunction

Probing Exciton Complexes and Charge Distribution in Inkslab-Like WSe2 Homojunction.

GeSe/WSe2 mixed dimensional p-n junction photoelectric properties

Photodetector Based on Heterostructure of Two-Dimensional WSe2/In2Se3.

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

Ultra‐Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances

Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

Layered Crystalline ZnIn2S4nanosheets: CVD Synthesis and Photo-Electrochemical Properties

Wafer-scale fabrication of 2D van der Waals heterojunctions for efficient and broadband photodetection