Abstract:Layer‐dependent optical modulation and field‐effecttransistor (FET) characteristics in two–dimensional (2D) 4H‐SnS2 are investigated. The ≈13 layered 4H‐SnS2 FETs show a high mobility (1–4 cm2 V−1 S−1) and on/off ratio (106). The high transmittance (90%) in bi‐layer 4H‐SnS2 and a distinctive layer‐dependent optical modulation sensible to human eyes can be potentially useful in nanoelectronic and optoelectronic devices. Two–dimensional (2D) 4H‐polytype tin disulfide (SnS2) flakes are synthesized using the chemical vapor transport technique. The weak Van der Waals force between the 2D SnS2 layers offers an easy exfoliation of flakes down to a bilayer of thickness ≈2.02 (±0.1) nm using a mechanical exfoliation technique. The optical and field effect transistor (FET) characteristics of the exfoliated 2D 4H‐SnS2 layers are studied. The exfoliated layers are used to fabricate the ≈13‐layered SnS2 FET. The 4H‐SnS2 exhibits a high on/off ratio of ≈106 and mobility ≈1–4 cm2 V−1 s−1. The low mobility of the 4H‐SnS2 FET devices shows an insulating state concordant with the 2D Motts variable range hopping mechanism at varying temperatures. Moreover, it is found that the optical bandgap of the 2D SnS2 single‐crystal layers is largely widened for the bilayers and tri‐layers. The optical bandgap energies vary in the range of 2.56–1.99 eV. The significant alteration in bandgap energies of ≈0.57 eV offers downscaling of the 2D nanoscale semiconducting devices. Such layer‐sensitive changes in optical transmittance, absorbance, and bandgap energies are reflected in Commission Internationale de L'Eclairage (CIE) chromaticity, showing the distinct color of transmittance through various 2D 4H‐SnS2 layers.

Raman Tensor of Layered WS2

Revealing the anisotropic phonon behaviours of layered SnS by angle/temperature-dependent Raman spectroscopy

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Layer-Dependent Valley Depolarization and Raman Phonon Softening of SnS 2 /MoS 2 Vertical van der Waals Heterostructures

Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Anomalous Polarized Raman Scattering and Large Circular Intensity Differential in Layered Triclinic Res2

Effects of Lower Symmetry and Dimensionality on Raman Spectra in 2D WSe2

In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

The In-Plane Anisotropy of WTe2 Investigated by Angle-Dependent and Polarized Raman Spectroscopy

Optical Study on Crystal Symmetry of Two-Dimensional WTe2

Effects of Lower Symmetry and Dimensionality on Raman Spectra in Two-Dimensional Wse2

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

Raman scattering investigation of twisted WS2/MoS2 heterostructures: interlayer mechanical coupling versus charge transfer

2D Optoelectronics: Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition (adv. Electron. Mater. 3/2020)

Polarized Raman spectroscopy study of CVD-grown Cr2S3 flakes: unambiguous identification of phonon modes

Polarized Raman of Nanoscale Two-Dimensional Materials: Combined Optical and Structural Effects

Layer‐Dependent Optical Modulation and Field‐Effect‐Transistor in Two‐Dimensional 4H‐SnS2 Layers

Enhanced Raman Scattering on In-Plane Anisotropic Layered Materials

Excellent response to near ultraviolet light and large intervalley scatterings of electrons in 2D SnS<sub>2</sub>