Abstract:Lacunar spinels, represented by AM4X8 compounds (A = Ga or Ge; M = V, Mo, Nb, or Ta; X = S or Se), form a unique group of ternary chalcogenide compounds. Among them, GeV4S8 has garnered significant attention due to its distinctive electrical and magnetic properties. While previous research efforts have primarily focused on studying how this material behaves under cooling conditions, pressure is another factor that determines the state and characteristics of solid matter. In this study, we employed a diamond anvil cell in conjunction with high-energy synchrotron X-ray diffraction, Raman spectroscopy, four-point probes, and theoretical computation to thoroughly investigate this material. We found that the structural transformation from cubic to orthorhombic was initiated at 34 GPa and completed at 54 GPa. Through data fitting of volume vs pressure, we determined the bulk moduli to be 105 ± 4 GPa for the cubic phase and 111 ± 12 GPa for the orthorhombic phase. Concurrently, electrical resistance measurements indicated a semiconductor-to-nonmetallic conductor transition at ∼15 GPa. Moreover, we experimentally assessed the band gaps at different pressures to validate the occurrence of the electrical phase transition. We infer that the electrical phase transition correlates with the valence electrons in the V4 cluster rather than the crystal structure transformation. Furthermore, the computational results, electronic density of states, and band structure verified the experimental observation and facilitated the understanding of the mechanism governing the electrical phase transition in GeV4S8.

Pressure-induced Superconductivity in GeAs

Pressure-induced superconductivity in a novel germanium allotrope

High-pressure Structural Phase Transition and Metallization in Ga2S3 under Non-Hydrostatic and Hydrostatic Conditions Up to 36.4 GPa

Memory of pressure-induced superconductivity in a phase-change alloy

Pressure-driven Superconductivity in Layered Isostructural Germanium Phosphides

Structural phase transition and potential superconductivity initiated by pressure-driven in 1T-CrSe2

Pressure-induced metallization and superconductivity in the layered van der Waals semiconductor GaTe

Suppression of metal-to-insulator transition and stabilization of superconductivity by pressure in Re3Ge7

Unusual structure and properties of germanium under pressure

Pressure-induced reversible structural phase transitions and metallization in GeTe under hydrostatic and non-hydrostatic environments up to 22.9 GPa

Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Pressure Induced Short-Range Structural Changes in Supercooled Liquid Ge2Sb2Te5

Pressure-induced metallic phase transition in gallium arsenide up to 24.3 GPa under hydrostatic conditions

Two high-pressure superconducting phases in pressurized optical semiconductor GaP

Structures and Phase Transition of GaAs under Pressure

Metallization of Quantum Material GaTa4Se8 at High Pressure.

A pressure-induced high-pressure metallic GeTe phase

Pressure-Induced Changes in the Crystal Structure and Electrical Conductivity of GeV 4 S 8

Multiple superconducting phases driven by pressure in the topological insulator GeSb4Te7

Pressure-induced Superconductivity and Nontrivial Band Topology in Compressed Γ-Inse