Enhanced p-CuI/n-ZnO photodetector based on thermal evaporated CuI and pulsed laser deposited ZnO nanowires

Songren Niu,Fengzhou Zhao,Yu Hang,Cheng Wang,Lianjie Xin,Menglong Zhang,Man Xu,Dengying Zhang,Xinbo Chu,Lichun Zhang
DOI: https://doi.org/10.1364/OL.382904
IF: 3.6
2020-01-01
Optics Letters
Abstract:The p-CuI/n-ZnO heterojunction photodetectors have been fabricated by thermal evaporation technique and pulsed laser deposition with a tubular furnace. The morphology, structure, and the light response performances of the device were investigated. The p-CuI/n-ZnO heterojunction photodetectors demonstrated a high on/off ratio of 5500, high peak responsivity of 0.235 A/W, and high specific detectivity of 1.23 x 10(12)( )cmHz(1/2)/W at -5 V bias voltage under 385 nm light illumination. Furthermore, the p-CuI/n-ZnO heterojunction photodetectors exhibited excellent reproducibility and stability. (C) 2020 Optical Society of America
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