Abstract:The HfOx/FeOx semiconductor heterojunction self‐rectifying‐RRAM with a robust self‐rectifying switching behavior featured by an average rectifying ratio (≈104), high resistance ratio (>106), high cycling endurance (>104 cycles), high computing precision (>6 bits) and high performance synaptic plasticity is developed for neuromorphic computing. A comprehensive study involving HR‐TEM in situ observation and band model is carried out for this self‐rectifying‐RRAM, showing a great potential in large scale array integration. Sneak‐path current is one of the biggest barriers for large‐scale passive memristor array integration. An ideal self‐rectifying resistance random access memory (SR‐RRAM) is a desirable solution but it has not been demonstrated today for optimizing comprehensive indexes for neuromorphic computing. The HfOx/FeOx semiconductor heterojunction SR‐RRAM with a robust self‐rectifying switching behavior featured by an average rectifying ratio (≈104), high resistance ratio (>106), high cycling endurance (>104 cycles), high computing precision (>6 bits) and synaptic plasticity such as paired‐pulse facilitation (PPF) and the spike‐timing‐dependent plasticity (STDP) for artificial intelligence recognition is developed using the unidirectional conductivity feature of p‐n junction. The electron hopping, tunneling, and blocking in this semiconductor heterojunction that is verified by the energy band mode based on UV photoelectron spectroscopy (UPS) technology and low‐energy inverse photoelectron spectroscopy (LEIPS) and in situ high resolution transmission electron microscopy (HR‐TEM) observation plays a dominant role in the self‐rectifying analog switching behaviors. This work provides energy‐band engineering for the large‐scale memristor array integration, representing a significant advancement in hardware for neuromorphic computing.

Toward a Reliable Synaptic Simulation Using Al-Doped HfO 2 RRAM.

Interface and Doping Engineering of HfO2 Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation.

Interface-engineered reliable HfO2-based RRAM for synaptic simulation

Research on Electronic Synaptic Simulation of HfO2-based Memristor by Embedding Al2O3

Ultrathin HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing

Interface-engineered reliable HfO<sub>2</sub>-based RRAM for synaptic simulation

Organic-2D composite material-based RRAM with high reliability for mimicking synaptic behavior

Reliable Analog Resistive Switching Behaviors Achieved Using Memristive Devices in AlO X /hfo X Bilayer Structure for Neuromorphic Systems

Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse

Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices

Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Self‐Rectifying Switching Memory Based on HfOx/FeOx Semiconductor Heterostructure for Neuromorphic Computing

Pulsed Operation on HfO2/Al2O3 RRAM Device As Electronic Dendrite

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

Photo-synaptic Memristor Devices from Solution-processed Ga2O3 Thin Films

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

Zinc-Alloyed HFO2 Synaptic RRAM with Operating Voltage and Switching Energy Enhancement

HfAlO-based Ferroelectric Memristors for Artificial Synaptic Plasticity