Movement of A-Type Dislocations in AlN under Electron Beam Irradiation

J. Huang,M. T. Niu,X. J. Su,K. Xu
DOI: https://doi.org/10.1088/1361-6463/ab5496
2019-01-01
Abstract:Significant a-type dislocation movement was directly observed in AlN films using a transmission electron microscope (TEM). Most of the a-type dislocations are arranged in arrays, which are similar in structure to the low-angle grain boundaries, and are unable to move under electron beam irradiation. Only a small number of bending dislocations, away from those dislocation arrays, could be excited to glide by electron beam irradiation. These moving dislocations can travel a rather long distance along the < 0001 > direction until their movements are stopped by the free surface or by the interface of the sample, and in some cases, by dislocation arrays. Finally, this letter presents a comprehensive analysis of electronirradiation-enhanced dislocation glide in AlN, with the role of the stress state in the dislocation movement under uniaxial stress conditions particularly emphasized.
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