A Transparent p-Type Semiconductor Designed via a Polarizability-Enhanced Strongly Correlated Insulator Oxide Matrix
Seung Yong Lee,Inseo Kim,Hyun Jae Kim,Sangjun Sim,Jae Hoon Lee,Sora Yun,Joonho Bang,Kyoungwon Park,Chul jong Han,Hyun-Min Kim,Heesun Yang,Bongjae Kim,Seongil Im,Antonio Facchetti,Min Suk Oh,Kyu Hyoung Lee,Kimoon Lee
DOI: https://doi.org/10.1039/d4mh00985a
IF: 13.3
2024-09-27
Materials Horizons
Abstract:Electron-transporting transparent conducting oxides (TCOs) are a commercial reality, however, hole-transporting counterparts are far more challenging because of limited material design. Here, we propose a strategy for enhancing the hole conductivity without deterioratinhg the band gap ( E g ) and workfunction (Φ) by Cu incorporation in a strongly correlated NiWO 4 insulator. The optimal Cu-doped NiWO 4 (Cu 0.185 Ni 0.815 WO 4 ) exhibits a resistivity reduction of ~10 9 times versus NiWO 4 as well as band-like charge transport with a hole mobility approaching 7 cm 2 /V·s at 200 K, a deep Φ of 5.77 eV and E g of 2.8 eV. Experimental and theoretical data reveal that the strength of the electron correlation in NiWO 4 is not frustrated by Cu incorporation while the promoted polarizability weakens electron-phonon coupling favouring large polaron appearance. Quantum dot light-emitting and oxide p/n junction devices incorporating Cu 0.185 Ni 0.815 WO 4 exhibit remarkable performances demonstrating that our approach can be deployed to discover new p -type TCOs.
materials science, multidisciplinary,chemistry