High-Performance β -Ga 2 O 3 Solar-Blind Photodetector With Extremely Low Working Voltage
Chen Chen,Xiaolong Zhao,Xiaohu Hou,Shunjie Yu,Rui Chen,Xuanze Zhou,Pengju Tan,Qi Liu,Wenxiang Mu,Zhitai Jia,Guangwei Xu,Xutang Tao,Shibing Long,Chen Chen,Xiaolong Zhao,Xiaohu Hou,Shunjie Yu,Rui Chen,Xuanze Zhou,Pengju Tan,Qi Liu,Wenxiang Mu,Zhitai Jia,Guangwei Xu,Xutang Tao,Shibing Long
DOI: https://doi.org/10.1109/led.2021.3108190
IF: 4.8157
2021-10-01
IEEE Electron Device Letters
Abstract:The Ga2O3 solar-blind photodetectors (SBPDs) face the tradeoff between power consumption ($P_{ ext {C}}$ ) and photoresponse performance. Here, an ultrasensitive two-terminal photodetector based on $oldsymbol {eta }$ -Ga2O3 microflake with extremely-low working voltage and ${P}_{ ext {C}}$ was achieved. At a working voltage of 2 V and ${P}_{ ext {C}}$ of 10 fW, the Ga2O3 SBPD exhibits superexcellent photodetection performance, including a responsivity (${R}$ ) of ${2.3},, imes ,,{10}^{{5}} ext{A}$ /W, a detectivity (${D}^{ oldsymbol {ast }}$ ) of ${3.5},, imes ,,{10}^{{18}}$ Jones, a photo-to-dark-current ratio (PDCR) of ${3.2},, imes ,,{10}^{{8}}$ , and an ultra-low dark current (${I}_{ ext {dark}}$ ) of 5 fA. Strikingly, the device keeps satisfactory performance at ultralow working voltage of 0.01 V, including a ${P}_{ ext {C}}$ of 0.05 fW, a ${R}$ of ${2.4},, imes ,,{10}^{{3}}$ A/W, a ${D}^{ oldsymbol {ast }}$ of ${5.6},, imes ,,{10}^{{16}}$ Jones, and a PDCR of ${3.4},, imes ,,{10}^{{6}}$ . The superior solar-blind sensitivity makes it the most excellent Ga2O3 detector towards high-performance and low-$P_{ ext {C}}$ SBPD applications.
engineering, electrical & electronic