Self-Driven $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ Solar-Blind Deep-Ultraviolet Photodetectors with Asymmetric MXene Electrodes

Chao Xie,Xisheng Cui,Shijie Xu,Yu Cheng,Liangpan Yang,Wenhua Yang,Zhixiang Huang

DOI: https://doi.org/10.1109/ted.2024.3454590

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:Here, a beta-Ga2O3 solar-blind deep-ultraviolet (DUV) photodetector operating in self-driven mode is designed. MXene films with diverse work functions enabled by different doping are drop-coated at opposite ends of a beta-Ga2O3 microflake to serve as asymmetric electrodes. The different work functions bring about a strong built-in electric field, rendering a pronounced photovoltaic (PV) effect. As a consequence, the light detector reaches a large I-light/I-dark ratio of 10(3), a low dark current of sub-pA, a decent responsivity of 9.81 mA/W, a respectable specific detectivity of 10(11) Jones, and a fast response speed of 10.2/17.7 ms, along with good operational stability, at zero bias, upon 254 nm light. The DUV/ultraviolet rejection ratio can attain 10(3). A flexible device also holds robust durability at various bending states. The study provides a viable route for constructing efficient DUV light detectors and is also helpful for developing MXene-based optoelectronic devices.