Abstract:The plateau-to-plateau transition in quantum Hall effect under high magnetic fields is a celebrated quantum phase transition between two topological states through either sweeping the magnetic field or tuning the carrier density. The recent realization of the quantum anomalous Hall (QAH) insulators with tunable Chern numbers introduces the channel degree of freedom to the dissipation-free chiral edge transport and makes the study of the quantum phase transition between two topological states under zero magnetic field possible. Here, we synthesized the magnetic topological insulator (TI)/TI penta-layer heterostructures with different Cr doping concentrations in the middle magnetic TI layers using molecular beam epitaxy (MBE). By performing transport measurements, we found a zero magnetic field quantum phase transition between the C = 1 and C = 2 QAH states. In tuning the transition, the Hall resistance monotonically decreases from h/e2 to h/2e2, concurrently, the longitudinal resistance exhibits a maximum at the critical point. Our results show that the ratio between the Hall resistance and the longitudinal resistance is greater than 1 at the critical point, which indicates that the original chiral edge channel from the C = 1 QAH state coexists with the dissipative bulk conduction channels. Subsequently, these bulk conduction channels appear to self-organize and form the second chiral edge channel in completing the plateau phase transition. Our study will motivate further investigations of this novel Chern number change-induced quantum phase transition and advance the development of the QAH chiral edge current-based electronic and spintronic devices.

Quasicrystalline Chern Insulators

Cn-symmetric quasi-periodic Chern insulators

Chern Insulators in Singular Geometries

Fractional Chern Insulators in Topological Flat Bands with Higher Chern Number

From Fractional Chern Insulators To Abelian And Non-Abelian Fractional Quantum Hall States: Adiabatic Continuity And Orbital Entanglement Spectrum

Higher-order Topological Insulators in Three Dimensions Without Crystalline Counterparts

Antiferromagnetic Chern insulators in non-centrosymmetric systems

Characterization Of Quasiholes In Two-Component Fractional Quantum Hall States And Fractional Chern Insulators In Vertical Bar C Vertical Bar=2 Flat Bands

Higher-order Topological Insulators and Semimetals in Three Dimensions without Crystalline Counterparts

Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators

Topological Hofstadter Insulators in a Two-Dimensional Quasicrystal

Quantum Hall criticality in an amorphous Chern insulator

Chern-insulator phase in antiferromagnets

Quantum quenches in a pseudo-Hermitian Chern insulator

Fractionally Quantized Electric Polarization and Discrete Shift of Crystalline Fractional Chern Insulators

Crystalline invariants of fractional Chern insulators

Engineering high Chern number insulators

Insight into the Quantum Anomalous Hall States in Two-Dimensional Kagome Cr3Se4 and Fe3S4 Monolayers

Quantum anomalous Hall crystals in moiré bands with higher Chern number

Realization of quasicrystalline quadrupole topological insulators in electrical circuits

Photoinduced High-Chern-Number Quantum Anomalous Hall Effect from Higher-Order Topological Insulators