Abstract:Ion migration as well as electron transfer and coupling in resistive switching materials endow memristors with a physically tunable conductance to resemble synapses, neurons, and their networks. Four different types of volatile memristors and another four types of nonvolatile memristors are systemically surveyed in terms of the switching mechanisms and electrical properties that are the basis of different computing applications. The volatile memristor features spontaneous conductance decay after the cease of electrical/optical stimulations, which are closely related to the surface atom diffusion, metal–insulator–transition (including charge–density–wave), thermal spontaneous emission, and charge polarization. Such unique dynamic state evolution at the edge of chaos has enabled them to emulate certain synaptic and neural dynamics, leading to various applications ranging from spiking neural networks to combinatorial optimizations. Nonvolatile resistive switching behavior originated from the electron spins, ferroelectric polarization, crystalline‐amorphous transitions or interplay between ions and electrons enables the memristor array to implement the vector–matrix multiplication, which is the key convolutional operation in artificial neural networks. The progress, challenges, and opportunities for both volatile and nonvolatile memristor in the level of materials, integration technology, algorithm, and system are highlighted in this review. Four volatile memristors and four nonvolatile memristors in terms of the switching dynamics, application in neuromorphic computing, and architectures of memristor arrays are systemically summarized. The motivation of this review is to refine the conception of volatile and nonvolatile memristor, summarizes the important progress in hardware technology, and proposes the possible solutions in different level for memristor‐based neuromorphic computing.

Non-zero-crossing Current-Voltage Hysteresis Behavior Induced by Capacitive Effects in Bio-Memristor

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Memristive effect with non-zero-crossing current-voltage hysteresis behavior based on Ag doped Lophatherum gracile Brongn

Non-zero crossing current–voltage characteristics of interface-type resistive switching devices

Non-zero crossing current-voltage characteristics of interface-type resistive switching devices

A Physics-Oriented Memristor Model with the Coexistence of NDR Effect and RS Memory Behavior for Bio-Inspired Computing

Evolution between Volatile and Nonvolatile Resistive Switching Behaviors in Ag/TiO x /CeO y /F-Doped SnO 2 Nanostructure-Based Memristor Devices for Information Processing Applications

Constructing a supercapacitor-memristor through non-linear ion transport in MOF nanochannels

Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene–PVA-Composite-Based Aryl Acrylate on ITO-Coated PET

Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory

Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability

Understanding of the Volatile and Nonvolatile Switching in Ag-Based Memristors

Unconventional Resistive Switching Behavior in Fibroin‐Based Memristor

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

Mechanism and Application of Capacitive-Coupled Memristive Behavior Based on a Biomaterial Developed Memristive Device

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

In-Depth Physical Mechanism Analysis and Wearable Applications of HfO x-Based Flexible Memristors

Evolution between CRS and NRS behaviors in MnO2@TiO2 nanocomposite based memristor for multi-factors-regulated memory applications

Coexistence of resistive capacitive and virtual inductive effects in memristive devices

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.