Antiferromagnetic Slater Insulator Phase in Copper Tellurium Oxide

Bao-Luo Yan,Han Qin,Wei Zeng,Hao Zhang,Yun Wei,Dai-He Fan,Bin Tang,Fu-Sheng Liu,Qi-Jun Liu
DOI: https://doi.org/10.1016/j.jmmm.2019.165861
IF: 3.097
2020-01-01
Journal of Magnetism and Magnetic Materials
Abstract:The metal-insulator transition (MIT) with large change in electric resistance offers the electronic devices great application prospects whatsoever limited by its gap formation mechanisms such as complex electron correlation or magnetic ordering effects. In the past, studies on Slater-type insulators based on antiferromagnetic (AFM)-ordering-induced MIT effect were only limited to high atomic number transition metal oxides (TMO). In this paper, we predict a Slater-type insulator based on spin-web Cu3TeO6 in AFM ground state by simulating the formation progress of MIT using density functional theory (DFT) and the local spin density approximation (LSDA) + U (Hubbard parameter). The molecular bonding relevant with orbital hybridization between Cu-3d and O-2p states are analyzed.
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